Temperature-dependent mechanical and electrical properties of boron-doped piezoresistive nanocantilevers

Journal of Micromechanics and Microengineering

Volumn 19, Issue 6, 2009, Pages

  Jiang, Yonggang ^a   Ono, Takahito ^a   Esashi, Masayoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; BORON-DOPED SILICON; BORON-DOPING; DISSIPATION MECHANISM; HIGH TEMPERATURE COEFFICIENT; MAXIMUM VALUES; MECHANICAL AND ELECTRICAL PROPERTIES; NANOMACHINING; OPTICAL DETECTION; PIEZO-RESISTIVE; PIEZORESISTANCE COEFFICIENTS; PIEZORESISTIVE COEFFICIENTS; PIEZORESISTIVE DETECTION; Q-FACTORS; RESONANT FREQUENCIES; ROOM TEMPERATURE; SINGLE CRYSTAL SILICON CANTILEVERS; SPIN-ON DIFFUSION; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENT;

BORON; DOPING (ADDITIVES); FREQUENCY RESPONSE; MECHANICAL PROPERTIES; NANOCANTILEVERS; NANOSTRUCTURED MATERIALS; NATURAL FREQUENCIES; Q FACTOR MEASUREMENT; SILICON WAFERS; SINGLE CRYSTALS;

ELECTRIC PROPERTIES;

EID: 68249151142     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/19/6/065030     Document Type: Article

References (19)

1. Binnig G, Quate C F and Gerber C H 1986 Atomic force microscopy Phys. Rev. Lett. 56 930-934
2. Ono T, Li X, Miyashita H and Esashi M 2003 Mass sensing of adsorbed molecules in sub-picogram sample with ultrathin silicon resonator Rev. Sci. Instrum. 74 1240-3
3. Ono T, Wakamatsu H and Esashi M 2005 Parametrically amplified thermal resonant sensor with pseudo-cooling effect J. Micromech. Microeng. 15 2282-8
4. Li M, Tang H X and Roukes M L 2007 Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications Nature Nanotechnol. 2 114-20
5. Toriyama T, Tanimoto Y and Sugiyama S 2007 Single crystal silicon nano-wire piezoresistors for mechanical sensors J. Microelectromech. Syst. 11 605-11
6. He R and Yang P 2006 Giant piezoresistance effect in silicon nanowires Nature Nanotechnol. 1 42-146
7. Rowe A C H 2008 Silicon nanowires feel the pinch Nature Nanotechnol. 3 311-2
8. Kanda Y 1982 A graphical representation of the piezoresistive coefficients in silicon IEEE Trans. Electron Dev. 29 64-70
9. Yuan C W, Batalla E, Zacher M, de Lozanne A L, Kirk M D and Tortonese M 1994 Low temperature magnetic force microscope utilizing a piezoresistive cantilever Appl. Phys. Lett. 65 1308-10
10. Lee S S, Miyatake Y, Shirak I, Nagamura T, Miki K, Ono T and Esashi M 2005 Optimization of the piezoresistive AFM cantilever design for use at cryogenic temperatures at cryogenic temperatures Transducers'05 pp 625-9
11. Jiang Y G, Ono T and Esashi M 2008 Fabrication of piezoresistive nanocantilevers for ultra-sensitive force detection Meas. Sci. Technol. 19 084011
12. Bargatin I, Myers E B, Arlett J, Gudlewski B and Roukes M L 2005 Sensitive detection of nanomechanical motion using piezoresistive signal downmixing Appl. Phys. Lett. 86 133109
13. Wachtman J B, Tefft W E, Lam D G and Apstein C S 1961 Exponential temperature dependence of Young's modulus for several oxides Phys. Rev. 122 1754-9
14. + silicon J. Microelectromech. Syst. 4 109-18
15. Hosaka H, Itao K and Kuroda S 1995 Damping characteristics of beam-shaped micro-oscillators Sensors Actuators A 49 87-95
16. Yasumura K Y, Stowe T D, Chow E M, Pfafman T, Kenny T W, Stipe B C and Rugar D 2000 Quality factors in micron- and submicron-thick cantilevers J. Microelectromech. Syst. 9 117-25
17. Yang J, Ono T and Esashi M 2002 Energy dissipation in submicrometer thick single-crystal silicon cantilevers J. Microelectromech. Syst. 11 775-83
18. Gysin U, Rast S, Ruff P and Meyer E 2004 Temperature dependence of the force sensitivity of silicon cantilevers Phys. Rev. B 69 045403
19. Zhang Q M, Wang H, Kim N and Cross L E 1993 Direct evaluation of domain-wall and intrinsic contributions to the dielectric and piezoelectric response and their temperature dependence on lead zirconate-titanate ceramics J. Appl. Phys. 75 454-9