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Volumn 1, Issue , 2005, Pages 625-629

Optimization of the piezoresistive AFM cantilever design for use at cryogenic temperatures

Author keywords

1 f noise; Hooge noise; Johnson noise

Indexed keywords

1/F NOISE; AFM CANTILEVERS; HOOGE NOISE; JOHNSON NOISE;

EID: 27544455928     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1111/j.1365-2265.2005.02387.x     Document Type: Conference Paper
Times cited : (10)

References (8)
  • 3
    • 21544472129 scopus 로고
    • Atomic resolution with an atomic force microscope using piezoresistive detection
    • M. Tortonese, R.C. Barrett, and C. F. Quate, "Atomic resolution with an atomic force microscope using piezoresistive detection", Appli. Phys. Lett., 62, No.8, 834-836 (1993)
    • (1993) Appli. Phys. Lett. , vol.62 , Issue.8 , pp. 834-836
    • Tortonese, M.1    Barrett, R.C.2    Quate, C.F.3
  • 4
    • 24544459259 scopus 로고
    • 1/f noise is no surface effect
    • F.N. Hooge, "1/f noise is no surface effect," Phys. Lett. A, 29, 139 - 140(1969)
    • (1969) Phys. Lett. A , vol.29 , pp. 139-140
    • Hooge, F.N.1
  • 5
    • 0033700892 scopus 로고    scopus 로고
    • 1/ F noise considerations for the design and process optimization of piezoresistive cantilevers
    • J. A. Harley, and T.W. Kenny, "1/ F Noise Considerations for the Design and Process Optimization of Piezoresistive Cantilevers", J. MEMS, 9, No.2, 226 - 234 (2000)
    • (2000) J. MEMS , vol.9 , Issue.2 , pp. 226-234
    • Harley, J.A.1    Kenny, T.W.2
  • 6
    • 0019916789 scopus 로고
    • A graphical representation of the piezoresistancc coefficients in silicon
    • Y. Kanda, "A Graphical Representation of the Piezoresistancc Coefficients in Silicon",IEEE Trans. Electronic Devices, ED-29, 64 - 70 (1982)
    • (1982) IEEE Trans. Electronic Devices , vol.ED-29 , pp. 64-70
    • Kanda, Y.1
  • 7
    • 36149015753 scopus 로고
    • Temperature dependence of the piezoresistance of high-purity silicon and germanium
    • F.J. Morin, T.H. Geballe, and C. Herring, " Temperature Dependence of the Piezoresistance of High-Purity Silicon and Germanium", Phys. Rev., 105, No.2, 525-539 (1957)
    • (1957) Phys. Rev. , vol.105 , Issue.2 , pp. 525-539
    • Morin, F.J.1    Geballe, T.H.2    Herring, C.3
  • 8
    • 0346658116 scopus 로고
    • Electrical properties of silicon containing arsenic and boron
    • F.J. Morin and J.P. Maita, "Electrical Properties of Silicon Containing Arsenic and Boron", Phys. Rev., 96, No.1, 28 - 35 (1954)
    • (1954) Phys. Rev. , vol.96 , Issue.1 , pp. 28-35
    • Morin, F.J.1    Maita, J.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.