Low-frequency noise partition of asymmetric MOS transistors operating in linear regime

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 840-842

  Marinov, Ognian ^a   Deen, M Jamal ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

1 f noise; Flicker noise; Low frequency noise (LFN) in asymmetric MOS transistors; Partition of nonuniform field effect devices

Indexed keywords

1/F NOISE; CHANNEL LENGTH; FLICKER NOISE; GATE BIAS; GRADED CHANNELS; LINEAR REGIME; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE (LFN) IN ASYMMETRIC MOS TRANSISTORS; MOS TRANSISTORS; NOISE VOLTAGE; PARTITION OF NONUNIFORM FIELD-EFFECT DEVICES; SERIES CONNECTIONS;

ELECTRIC POTENTIAL; MOS DEVICES; THERMAL NOISE; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 68249146432     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2023382     Document Type: Article

References (17)

1. J. Ranuarez, M. J. Deen, and C.-H. Chen, "Modeling the partition of noise from the gate-tunneling current in MOSFETs," IEEE Electron Device Lett., vol. 26, no. 8, pp. 550-552, Aug. 2005.
2. T. Contaret, K. Romanjek, T. Boutchacha, G. Ghibaudo, and F. Boeuf, "Low frequency noise characterization and modelling in ultrathin oxide MOSFETs," Solid State Electron., vol. 50, no. 1, pp. 63-68, Jan. 2006.
3. B. Boukriss, H. Haddara, S. Cristoloveanu, and A. Chovet, "Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection," IEEE Electron Device Lett., vol. 10, no. 10, pp. 433-436, Oct. 1989.
4. M. J. Deen and C. Quon, "Characterization of hot-carrier effects in short channel NMOS devices using low frequency noise measurements," in Proc. INFOS, 1991, p. 295.
5. M.-H. Tsai and T.-P. Ma, "The impact of device scaling on the current fluctuations in MOSFETs," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 2061-2068, Nov. 1994.
6. Z. Celik-Butler and P. Vasina, "Channel length scaling of 1/f noise in 0.18μm technology MDD n-MOSFETs," Solid State Electron., vol. 43, no. 9, pp. 1695-1701, Sep. 1999.
7. J.-M. Peransin, P. Vignaud, D. Rigaud, and L. K. J. Vandamme, "1/f noise in MODFETs at low drain bias," IEEE Trans. Electron Devices vol. 37, no. 10, pp. 2250-2253, Oct. 1990.
8. A. Ahsan and S. Ahmed, "Degradation of 1/f noise in short channel MOSFETs due to halo angle induced VT nonuniformity and extra trap states at interface," Solid State Electron., vol. 50, no. 11/12, pp. 1705-1709, Nov./Dec. 2006.
9. K. Narasimhulu, I. Setty, and V. Rao, "The effect of single-halo doping on the low-frequency noise performance of deep submicrometer MOSFETs," IEEE Electron Device Lett., vol. 27, no. 12, pp. 995-997, Dec. 2006.
10. E. Simoen, C. Claeys, T. Chung, D. Flandre, and J.-P. Raskin, "On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs," IEEE Electron Device Lett., vol. 28, no. 10, pp. 919-921, Oct. 2007.
11. E. Simoen, C. Claeys, T. Chung, D. Flandre, J.-P. Raskin, M. A. Pavanello, and J. A. Martino, "The low-frequency noise behaviour of graded-channel SOI nMOSFETs," Solid State Electron., vol. 51, no. 2, pp. 260-267, Feb. 2007.
12. M. Videnovic-Misic and M. Jevtic, "Modelling of dual-Gate MOSFET 1/f noise in linear region," in Proc. EUROCON, 2007, pp. 1987-1993.
13. M. J. Deen, B. Iniguez, O. Marinov, and F. Lime, "Electrical studies of semiconductor - Dielectric interfaces," J. Mater. Sci., vol. 17, no. 9, pp. 663-683, Sep. 2006.
14. Int. Technol. Roadmap for Semiconductors. [Online]. Available: http:// public.itrs.net
15. J. Armand, F. Martinez, J. Gyani, P. Benoit, M. Valenza, E. Vincent, V. Huard, C. Guerin, and K. Rochereau, "Extraction of slow oxide trap profiles by low-frequency noise analysis," in Proc. ULIS, 2008, pp. 155-158.
16. K. Vliet, A. Friedmann, R. Zijlstra, A. Gisolf, and A. Ziel, "Noise in single injection diodes. I. A survey of methods," J. Appl. Phys., vol. 46, no. 4, pp. 1804-1813, Apr. 1975.
17. K. Vliet, A. Friedmann, R. Zijlstra, A. Gisolf, and A. Ziel, "Noise in single injection diodes. II. Applications," J. Appl. Phys., vol. 46, no. 4, pp. 1813-1823, Apr. 1975.