The effect of single-halo doping on the low-frequency noise performance of deep submicrometer MOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 12, 2006, Pages 995-997

  Narasimhulu, K ^a   Setty, I Venkatasuryam ^a,b   Rao, V Ramgopal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b Qualcorelogic Ltd   (India)

Author keywords

Low frequency noise; Normalized drain current noise spectral density; Single halo (SH) devices

Indexed keywords

CALCULATIONS; CURRENT DENSITY; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

DEEP SUBMICROMETER; LOW-FREQUENCY NOISE; NORMALIZED DRAIN-CURRENT NOISE SPECTRAL DENSITY; SINGLE-HALO (SH) DEVICES; SINGLE-HALO DOPING;

MOSFET DEVICES;

EID: 33947238218     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886409     Document Type: Article

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