Degradation of 1/f noise in short channel MOSFETs due to halo angle induced VT non-uniformity and extra trap states at interface

Solid-State Electronics

Volumn 50, Issue 11-12, 2006, Pages 1705-1709

  Ahsan, A K M ^a   Ahmed, Shaikh ^b  

^a Arizona State University   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Halo angle; Hot carrier effect; Interface trap density; Low frequency noise; Oxide trap density; Silicon; Silicon dioxide; Threshold voltage

Indexed keywords

ELECTRON TRAPS; INTERFACES (MATERIALS); SILICA; SILICON; THRESHOLD VOLTAGE;

HALO ANGLE; HOT CARRIER EFFECT; INTERFACE TRAP DENSITY; LOW FREQUENCY NOISE; OXIDE TRAP DENSITY;

MOSFET DEVICES;

EID: 33751205065     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.09.010     Document Type: Article

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