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Volumn 50, Issue 1, 2006, Pages 63-68

Low frequency noise characterization and modelling in ultrathin oxide MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; OXIDES; SPURIOUS SIGNAL NOISE;

EID: 30344438867     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.035     Document Type: Conference Paper
Times cited : (24)

References (14)
  • 1
    • 0346076865 scopus 로고    scopus 로고
    • Noise model of gate-leakage current in ultrathin oxide MOSFETs
    • J. Lee, G. Bosman, K.R. Green, and D. Ladwig Noise model of gate-leakage current in ultrathin oxide MOSFETs IEEE Trans Electron Dev 50 12 2003 2499 2506
    • (2003) IEEE Trans Electron Dev , vol.50 , Issue.12 , pp. 2499-2506
    • Lee, J.1    Bosman, G.2    Green, K.R.3    Ladwig, D.4
  • 3
    • 0042594432 scopus 로고    scopus 로고
    • New approach for the gate current source-drain partition modeling in advanced MOSFETs
    • K. Romanjek, F. Lime, G. Ghibaudo, and C. Leroux New approach for the gate current source-drain partition modeling in advanced MOSFETs Solid-State Electron 47 2003 1657 1661
    • (2003) Solid-State Electron , vol.47 , pp. 1657-1661
    • Romanjek, K.1    Lime, F.2    Ghibaudo, G.3    Leroux, C.4
  • 4
    • 30344451845 scopus 로고    scopus 로고
    • Patent No. 15075, France. Registered in November
    • Chroboczek JA, Piantino G. Patent No. 15075, France. Registered in November 1999.
    • (1999)
    • Chroboczek, J.A.1    Piantino, G.2
  • 5
    • 0024703054 scopus 로고
    • On the theory of carrier number fluctuations in MOS devices
    • G. Guibaudo On the theory of carrier number fluctuations in MOS devices Solid-State Electron 32 1989 563
    • (1989) Solid-State Electron , vol.32 , pp. 563
    • Guibaudo, G.1
  • 7
    • 0026938662 scopus 로고
    • 1/f noise in series resistance of LDD MOST's
    • X. Li, and L.K.J. Vandamme 1/f noise in series resistance of LDD MOST's Solid-State Electron 35 1992 1471
    • (1992) Solid-State Electron , vol.35 , pp. 1471
    • Li, X.1    Vandamme, L.K.J.2
  • 9
    • 30344457205 scopus 로고    scopus 로고
    • Low frequency noise in advanced CMOS devices
    • G. Ghibaudo Low frequency noise in advanced CMOS devices Recent Res Devel Appl Phys 6 2003 193 209
    • (2003) Recent Res Devel Appl Phys , vol.6 , pp. 193-209
    • Ghibaudo, G.1
  • 13
    • 0023432341 scopus 로고
    • A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs
    • G. Ghibaudo A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs Solid-State Electron 30 1987 1037
    • (1987) Solid-State Electron , vol.30 , pp. 1037
    • Ghibaudo, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.