Extraction of slow oxide trap profiles by low-frequency noise analysis: Application to hot-electron-induced degradation

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 155-158

  Armand, J ^a   Martinez, F ^a   Gyani, J ^a   Benoit, P ^a   Valenza, M ^a   Vincent, E ^b   Huard, V ^b   Guerin, C ^b   Rochereau, K ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIFFERENTIAL EQUATIONS; GREEN'S FUNCTION; NONMETALS; SILICON; TWO DIMENSIONAL;

CHANNEL REGIONS; HOT-CARRIERS; INDUCED DEGRADATION; INTERNATIONAL CONFERENCES; LOW FREQUENCIES; LOW-FREQUENCY NOISE; MOSFETS; NOISE MODELLING; OXIDE TRAP DENSITY; OXIDE TRAPS; STRESS TIMES; TRAP DENSITIES;

SULFATE MINERALS;

EID: 49049091211     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527162     Document Type: Conference Paper

References (10)

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8. J. Armand, F. Martinez, M. Valenza, K. Rochereau, E. Vincent, "Slow Oxide Trap Density Profile Extraction Using Gate Current Low-Frequency Noise in Ultrathin Oxide MOSFETs", Microelectronic Engineering, Vol.84, Iss.9-10, September 2007, Pages: 2382-2385.
9. A.Cester, S. Gerardin, A. Paccagnella, G. Ghidini, "Modeling MOSFET and circuit degradation through SPICE", Proceeding of ESSDERC, Grenoble, France, 2005.
10. C.Guerin, V.Huard, A. Bravaix, M.Denais, "Impact of hot carrier degradation modes on I/O n MOSFETs aging prediction", IEEE IIRW 2006, pp.63-67.