Transport properties in band-tails of high mobility poly-Si TFTs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 937-940

  Serikawa, Tadashi ^a   Shirai, Seiiti ^a   Nakagawa, Kazuo ^b   Takaoka, Sadao ^b   Oto, Kenichi ^b   Murase, Kazuo ^b   Ishida, Shuichi ^c  

^a NTT CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Band tails; Grain boundaries; Poly Si TFTs; Strong localization; Transport properties; Variable range hopping; Weak localization

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; GRAIN BOUNDARIES; LOW TEMPERATURE PROPERTIES; POLYCRYSTALLINE MATERIALS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

BAND TAILS; QUANTUM INTERFERENCE EFFECT; STRONG LOCALIZATION; VARIABLE RANGE HOPPING; WEAK LOCALIZATION;

THIN FILM TRANSISTORS;

EID: 0030079664     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.937     Document Type: Article

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