Preparation of NiSi2 nanowires with low resistivity by reaction between ni coating and silicon nanowires

Applied Physics Express

Volumn 2, Issue 7, 2009, Pages

  Jiang, Suhua ^a   Xin, Qianqian ^a   Chen, Yangwen ^a   Lou, Hui ^a   Lv, Yinxiang ^a   Zeng, Wei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GATE MATERIALS; HIGH-RESOLUTION TRANSMISSION MICROSCOPIES; LOW ENERGY IMPLANTATION; LOW RESISTIVITY; NANOELECTRONIC DEVICES; NI COATING; NICKEL SILICIDE; SELECTIVE AREA ELECTRON DIFFRACTION; SILICON NANOWIRES; SILICON RICH; TERMINAL ELECTRICAL MEASUREMENTS;

ELECTRIC PROPERTIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; NICKEL; NICKEL ALLOYS; SILICIDES;

ELECTRIC WIRE;

EID: 68249121057     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.075005     Document Type: Article

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