Growth of nickel silicide thin films by solid phase reaction and ion beam synthesis

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue SUPPL., 2006, Pages 131-135

  Zhang, Xingwang ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Electrical properties; Ion beam synthesis; Nickel silicide films; Solid phase reaction

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; HALL EFFECT; ION IMPLANTATION; NICKEL; RAMAN SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

NICKEL SILICIDE FILMS; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); SOLID PHASE REACTION;

SILICON COMPOUNDS;

EID: 33847794406     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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