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Volumn 13, Issue 6, 2006, Pages 558-563

Interface structure between epitaxial NiSi2 and Si

Author keywords

atomic structure; high resolution; image simulation; interface; nickel silicide

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; INTERFACES (MATERIALS); NICKEL; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EID: 33845893052     PISSN: 10058850     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-8850(06)60113-8     Document Type: Article
Times cited : (2)

References (13)
  • 1
    • 32044442936 scopus 로고    scopus 로고
    • The improvement of thermal stability of nickel silicide by addinga thin Zr interlayer
    • Huang W., Zhang L.C., Gao Y.Z., and Jin H.Y. The improvement of thermal stability of nickel silicide by addinga thin Zr interlayer. Microelectron. Eng. 83 (2006) 345
    • (2006) Microelectron. Eng. , vol.83 , pp. 345
    • Huang, W.1    Zhang, L.C.2    Gao, Y.Z.3    Jin, H.Y.4
  • 7
    • 0025236084 scopus 로고
    • Computer simulation of metal-semiconductor and semiconductor-semiconductor interfaces
    • Matthai C.C., and Ashu P. Computer simulation of metal-semiconductor and semiconductor-semiconductor interfaces. J. Phys. C 1 (1990) 873
    • (1990) J. Phys. C , vol.1 , pp. 873
    • Matthai, C.C.1    Ashu, P.2
  • 12
    • 0030125920 scopus 로고    scopus 로고
    • Microstructural characterization of ordered nickel silicide structures grown on (111) nickel silicide films
    • Ho H.L., Bauer C.L., Mahajan S., Laughlin D.E., and Milnes A.G. Microstructural characterization of ordered nickel silicide structures grown on (111) nickel silicide films. J. Mater. Res. 11 (1996) 904
    • (1996) J. Mater. Res. , vol.11 , pp. 904
    • Ho, H.L.1    Bauer, C.L.2    Mahajan, S.3    Laughlin, D.E.4    Milnes, A.G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.