Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 926-929

  Park, D S ^a   Kang, S J ^a   Kim, H J ^a   Jang, M H ^a   Noh, M ^a   Yoo, K H ^a   Whang, C N ^a   Lee, Y S ^b   Lee, M H ^c  

^a Yonsei University   (South Korea)

^b Hanbat National University   (South Korea)

^c Yonsei University Wonju   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; MONOLAYERS; REFLECTION; SCANNING ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

FIELD EFFECT MOBILITY; OCTADECYLTRICHLOROSILANE (OTS);

THIN FILM TRANSISTORS;

EID: 29344444353     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1924418     Document Type: Article

References (23)

1. J. M. Shaw and P. F. Seidler, IBM J. Res. Dev. 45, 3 (2001).
2. C. D. Dimitrakopoulous and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001).
3. G. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).
4. G. Horowitz and M. E. Hajlaoui, Adv. Mater. (Weinheim, Ger.) 12, 1046 (2000).
5. G. Horowitz, Adv. Funct. Mater. 13, 53 (2003).
6. Z. Bao, A. Dodabalapur, and A. J. Lovinger, Appl. Phys. Lett. 69, 4108 (1996).
7. L. Bürgi, T. J. Richards, R. H. Friend, and H. Sirringhaus, J. Appl. Phys. 94, 6129 (2003).
8. Y. Chen, I. Shih, and S. Xiao, J. Appl. Phys. 96, 454 (2004).
9. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997).
10. J. G. Laquindanum, H. E. Katz, A. J. Lovinger, and A. Dodabalapur, Chem. Mater. 8, 2542 (1996).
11. D. J. Gundlach, C.-C. Kuo, S. F. Nelson, and T. N. Jackson, Proceedings 57th Device Research Conference Digest, University of California, Santa Barbara, 1999, p. 164.
12. C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
13. S. J. Kang, M. Noh, D. S. Park, H. J. Kim, C. N. Whang, and C.-H. Chang, J. Appl. Phys. 95, 2293 (2004).
14. D. A. Dtyrkas, J. L. Keddie, J. R. Lu, T. J. Su, and P. A. Zhdan, J. Appl. Phys. 85, 868 (1999).
15. T. Y. Choi, H. S. Kang, D. H. Park, J. M. Koo, J. K. Lee, S. D. Ahn, and J. Joo, Synth. Met. 137, 929 (2003).
16. S. H. Kim, Y. S. Yang, J. H. Lee, J. I. Lee, H. Y. Chu, H. Lee, J. Oh, L. M. Do, and T. Zyung, Opt. Mater. (Amsterdam, Neth.) 21, 439 (2002).
17. S. C. Clear and P. F. Nealey, J. Chem. Phys. 114, 2802 (2001).
18. D. A. Neamen, Semiconductor for Physics & Devices, 2nd ed. (Irwin, Chicago, 1997), p. 457.
19. X. Liu, S. H. Mohamed, J. M. Ngaruiya, M. Wuttig, and T. Michely, J. Appl. Phys. 93, 4852 (2003).
20. S. Zorba, L. Yan, N. J. Watkins, and Y. Gao, Appl. Phys. Lett. 81, 5195 (2002).
21. M. Shtein, J. Mapel, J. B. Benziger, and S. R. Forrest, Appl. Phys. Lett. 81, 268 (2002).
22. D. Knipp, R. A. Street, A. Volkel, and J. Ho, J. Appl. Phys. 93, 347 (2003).
23. B. D. Cullity and S. R. Stock, Elements of X-ray Diffraction, 3rd ed. (Prentice-Hall, New Jersey, 2001), p. 388.