Single-electron device with si nanodot array and multiple input gates

IEEE Transactions on Nanotechnology

Volumn 8, Issue 4, 2009, Pages 535-541

  Kaizawa, Takuya ^a   Arita, Masashi ^a   Fujiwara, Akira ^b   Yamazaki, Kenji ^b   Ono, Yukinori ^b   Inokawa, Hiroshi ^c   Takahashi, Yasuo ^a   Choi, Jung Bum ^d  

^a HOKKAIDO UNIVERSITY   (Japan)

^b NTT Basic Research Laboratories   (Japan)

^c SHIZUOKA UNIVERSITY   (Japan)

^d Chungbuk National University   (South Korea)

Author keywords

Coulomb blockade; Dot array; Logic devices; Logic functions; Quantum dots; Silicon; Silicon on insulator technology; Single electron

Indexed keywords

BASIC OPERATION; CONTROL GATES; DEVICE CHARACTERISTICS; DEVICE FUNCTIONALITY; DOT ARRAY; GATE VOLTAGES; LOGIC FUNCTIONS; MULTIPLE INPUTS; NANODOTS; QUANTUM DOTS; SI NANODOT; SILICON ON INSULATOR WAFERS; SINGLE ELECTRON; SINGLE-ELECTRON DEVICES; SMALL SIZE;

CELLULAR RADIO SYSTEMS; COULOMB BLOCKADE; ELECTRIC POTENTIAL; ELECTRON DEVICES; ELECTRONS; LOGIC DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON WAFERS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 67949124582     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2016338     Document Type: Article

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