Room temperature ferromagnetism of Mn implanted AlInN

Japanese Journal of Applied Physics

Volumn 48, Issue 4, 2009, Pages

  Majid, Abdul ^a,b   Sharif, Rehana ^c   Ali, Akbar ^b   Zhu, Jian Jun ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b QUAID I AZAM UNIVERSITY   (Pakistan)

^c UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; BOUND MAGNETIC POLARONS; HOLE EMISSION; HYSTERESIS BEHAVIOR; INTERNAL TRANSITIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL THRESHOLD; QUANTUM DESIGN SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SATURATION MAGNETIC MOMENTS; WURTZITE;

DEPOSITION; FERROMAGNETISM; MAGNETIC MOMENTS; MANGANESE COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; POLARONS; SQUIDS; SUPERCONDUCTING FILMS; ZINC SULFIDE;

MANGANESE;

EID: 67849128627     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.040202     Document Type: Article

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