Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

  Reed, M J ^a   Arkun, F E ^a   Berkman, E A ^a   Elmasry, N A ^a   Zavada, J ^b   Luen, M O ^a   Reed, M L ^a   Bedair, S M ^a  

^a North Carolina State University   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR ELECTRONS; METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); SPIN POLARIZATION; TRIMETHYLGALLIUM;

CHEMICAL VAPOR DEPOSITION; FERMI LEVEL; FERROMAGNETISM; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; POLARIZATION; SEMICONDUCTOR DOPING; SILICON;

SEMICONDUCTING GALLIUM;

EID: 18044364410     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1881786     Document Type: Article

References (10)

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