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Volumn 48, Issue 4, 2009, Pages

Defect generation for a hydrated layer and thermal stability based on Ba0.7Sr0.3TiO3/SiO2 as H+ sensitive layer in Ion-Sensitive Field-Effect transistor devices

(3) Chen, Chun Yuan a Chou, Jung Chuan a Chou, Hsueh Tao a

a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDIC SOLUTIONS; DEFECT GENERATION; DEVICE SENSITIVITY; DIFFUSION LAYERS; GATE ELECTRODES; HYDRATED LAYER; HYDRATION LAYERS; INTERFACE STATE DENSITY; LINEAR-SHIFT; METAL INSULATOR SEMICONDUCTOR STRUCTURES; PH BUFFERS; PH RANGE; PH SENSITIVITY; PHYSICAL MODEL; POLARITY DEPENDENCE; POSITIVE CHARGES; SENSITIVE LAYERS; SPUTTERING DEPOSITION; SUBSTRATE INJECTION; TEMPERATURE COEFFICIENT; TEMPERATURE EFFECTS; THERMAL STABILITY; TIO;

BARIUM; CHARGE TRAPPING; FIELD EFFECT TRANSISTORS; HYDRATES; METAL INSULATOR BOUNDARIES; MIS DEVICES; PH EFFECTS; SILICON COMPOUNDS; SWITCHING CIRCUITS; THERMODYNAMIC STABILITY;

HYDRATION;

EID: 67849109891 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.045501 Document Type: Article

Times cited : (4)

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