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Volumn 40, Issue 6 A, 2001, Pages 3975-3978
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Temperature dependence of surface potential in a-Si:H pH-Ion sensitive field effect transistor
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Author keywords
A Si:H SiO2 gate pH ISFET; Al a Si:H SiO2 gate MOSFET; PECVD; Surface potential; Thermal evaporation system
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
DOPING (ADDITIVES);
EVAPORATION;
HYDROGEN;
MOSFET DEVICES;
NUMERICAL ANALYSIS;
PH EFFECTS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON;
SURFACE PROPERTIES;
THERMAL EFFECTS;
THICKNESS MEASUREMENT;
GATE ELECTRODE;
SURFACE POTENTIAL;
THERMAL EVAPORATION SYSTEM;
ION SENSITIVE FIELD EFFECT TRANSISTORS;
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EID: 0035358946
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.3975 Document Type: Article |
Times cited : (2)
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References (11)
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