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Volumn 40, Issue 6 A, 2001, Pages 3975-3978

Temperature dependence of surface potential in a-Si:H pH-Ion sensitive field effect transistor

Author keywords

A Si:H SiO2 gate pH ISFET; Al a Si:H SiO2 gate MOSFET; PECVD; Surface potential; Thermal evaporation system

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); EVAPORATION; HYDROGEN; MOSFET DEVICES; NUMERICAL ANALYSIS; PH EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SURFACE PROPERTIES; THERMAL EFFECTS; THICKNESS MEASUREMENT;

EID: 0035358946     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3975     Document Type: Article
Times cited : (2)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.