An analytical technique for counteracting drift in ion-selective field effect transistors (ISFETs)

IEEE Sensors Journal

Volumn 4, Issue 6, 2004, Pages 795-801

  Jamasb, Shahriar ^a  

^a Mazdak Technologies   (United States)

Author keywords

Continuous monitoring; Drift; Instability; Ion selective field effect transistor (ISFET); pH

Indexed keywords

ALUMINA; APPROXIMATION THEORY; BLOOD; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; PH EFFECTS; PHYSIOLOGY; SIGNAL PROCESSING; SILICON NITRIDE;

ANALYTICAL TECHNIQUES; CONTINUOUS MONITORING; DRIFT; ION-SELECTIVE FIELD EFFECT TRANSISTORS (ISFET);

FIELD EFFECT TRANSISTORS;

EID: 10044236474     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2004.833148     Document Type: Article

References (26)

1. S. Caras and J. Janata, "Field effect transistor sensitive to penicillin," Anal. Chem., vol. 52, pp. 1935-1937, 1980.
2. B. H. van der School and P. Bergveld, "ISFET-based enzyme sensors," Biosens., vol. 3, pp. 161-186, 1987/88.
3. Handbook of Modern Sensors, 2nd ed. New York: Springer-Verlag, 1996. J. Fraden.
4. A. Johnston, "Trends in biosensor research and development," in Proc. Int. Electron Device Meeting, 1988, pp. 654-657.
5. P. Bergveld, "Development of an ion-sensitive solid state device for neurophysiological measurements," IEEE Trans. Biomed. Eng., vol. BME-17, pp. 70-71, Jan. 1970.
6. M. A. Afromowitz and S. S. Yee, J. Bioeng., vol. 1, pp. 55-60, 1977.
7. P. Bergveld and A. Sibbald, Comprehensive Analytical Chemistry. Amsterdam, The Netherlands: Elsevier, 1988, vol. XXIII.
8. T. Matsuo and M. Esashi, "Methds of ISFET fabrication," Sens, Actuators, vol. 1, pp. 77-96, 1981.
9. S. J. Schepel, N. F. DeRooij, G. Koning, B. Oeseburg, and W. G. Zijlstra, "In vivo experiments with pH-ISFET electrode," Med. Biol. Eng. Comput., vol. 22, p. 6, 1984.
10. P. Bergveld, Implantable Sensors for Closed-loop Prosthetic Systems, W. H. Ko, Ed. Mount Kisco, NY: Futura, 1985.
11. 3-gate pH ISFETs," in Proc. 9th Int. Conf. Solid-State Sensors and Actuators, Chicago, IL, June 15-19, 1997.
12. +-sensitive FETs (pH ISFETs)," IEEE Trans. Electron Devices, vol. 45, June 1998.
13. _, "A physical model for drift in pH ISFETs," Sens. Actuators B, vol. 49, no. 1-2, pp. 146-155, 1998.
14. _, "Correction of instability in ion-sensitive field effect transistors (ISFETs) for accurate continuous monitoring of pH," in Proc. Int. Conf. IEEE/Engineering in Medicine and Biology Society, Chicago, IL, Nov. 1997.
15. S. Jamasb, J. N. Churchill, S. D. Collins, and R. L. Smith, "Accurate continuous monitoring using ISFET-based biosensors based on characterization and modeling of drift and low frequency noise," in Proc. Int. Conf. IEEE/Engineering in Medicine and Biology Society, Hong Kong, Oct. 1998.
16. S. Jamasb, "Characterization, modeling, and correction of drift in pH-sensitive ion-selective field effect transistors," Ph.D. dissertation, Univ. California, Davis, 1998.
17. S. Jamasb, S. D. Collins, and R. L, Smith, "Characterization, modeling, and correction of drift in complementary pH ISFETs," in Proc. Int. Electrochemical Society Conf., San Francisco, CA, Sept. 2001.
18. M. L. Boas, Mathematical Methods in the Physical Sciences, 2nd ed. New York: Wiley, 1983, ch. 4.
19. M. Esashi and T. Matsuo, "Integrated micro multi ion sensor using field effect of secmiconductor," IEEE Trans. Biomed. Eng, vol. BME-25, pp. 184-192, Jan. 1978.
20. L. Bousse and P. Bergveld, "The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs," Sens. Actuators, vol. 6, pp. 65-78, 1984.
21. D. L. Harame, L. J. Bousse, J. D. Shott, and J. D. Meindl, "Ion-sensing devices with silicon nitride and borosilicate glass insulators," IEEE Trans. Electron Devices, vol. ED-34, pp. 1700-1707, Aug. 1987.
22. J. K. Atkinson, R. P. Sion, and E. Sizeland. "The characterization and compensation through sensor array signal processing techniques of drift and low frequency noise in thick-film semiconductor sensors." Sens. Actuators A, vol. 41-42, pp. 607-611, 1994.
23. J. Janata and R. J. Huber, Solid State Chemical Sensors. Orlando, FL: Academic, 1985.
24. H. Scher and E. W. Montroll, "Anomolous transit-time dispersion in amorphous solids," Phys. Rev. B., vol. 12, no. 6, pp. 2455-2477, 1975.
25. 3," Phys. Rev. B., vol. 15, no. 4, p. 2062, 1977.
26. J. Kakalios, R. A. Street, and W. B. Jackson, "Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon," Phys. Rev. Lett., vol. 53, pp. 1037-1040, 1987.