Generation-recombination noise of DX centers in AlN:Si

Applied Physics Letters

Volumn 79, Issue 15, 2001, Pages 2396-2398

  Goennenwein, S T B ^a   Zeisel, R ^a   Ambacher, O ^a   Brandt, M S ^a   Stutzmann, M ^a   Baldovino, S ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040330135     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1405426     Document Type: Article

References (12)

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11. This is often observed and can be due to a variety of reasons, e.g., a distribution of time constants, band bending, etc.
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