Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Prinz, G I M ^a   Ladenburger, A ^a   Schirra, M ^a   Feneberg, M ^a   Thonke, K ^a   Sauer, R ^a   Taniyasu, Y ^b   Kasu, M ^b   Makimoto, T ^b  

^a UNIVERSITY OF ULM   (Germany)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ENERGY GAP; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; REFLECTION; SILICON CARBIDE;

ALUMINUM NITRIDE; FREE EXCITON RECOMBINATION; REFLECTANCE SPECTROSCOPIES; ULTRAVIOLET OPTOELECTRONIC APPLICATIONS;

ALUMINUM;

EID: 33847741431     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2423141     Document Type: Article

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