Design considerations for 1.3 μm GaNAsSb-GaAs high speed and high quantum efficiency waveguide photodetectors

Journal of Lightwave Technology

Volumn 27, Issue 13, 2009, Pages 2518-2524

  Xu, S ^a   Yoon, S F ^a   Loke, W L ^a   Ngo, C Y ^a   Tan, K H ^a   Saadsaoud, N ^b   Decoster, D ^b   Zegaoui, M ^b   Chazelas, J ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUT D ELECTRONIQUE   (France)

^c THALES   (France)

Author keywords

Dilute nitride; GaNAsSb; Optimization; Waveguide photodetector (WGPD)

Indexed keywords

ALUMINUM COMPOSITION; CLADDING LAYER; CORE LAYERS; DESIGN CONSIDERATIONS; DESIGN GUIDE; DILUTE-NITRIDE; FINITE DIFFERENCE BEAM PROPAGATION METHOD; GAAS; GANASSB; HIGH QUANTUM EFFICIENCY; LUMPED ELEMENT MODEL; OPTICAL CHARACTERISTICS; WAVEGUIDE PHOTODETECTOR (WGPD); WAVEGUIDE PHOTODETECTORS; WAVEGUIDE STRUCTURE;

ALUMINA; ALUMINUM; BEAM PROPAGATION METHOD; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; STRUCTURAL DESIGN; WAVEGUIDES;

QUANTUM EFFICIENCY;

EID: 67651108659     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2009.2013323     Document Type: Article

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