메뉴 건너뛰기




Volumn 7, Issue 7, 1989, Pages 1044-1054

Low-Loss Single-Mode GaAs/AlGaAs Miniature Optical Waveguides with Straight and Bending Structures

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTICS; SEMICONDUCTING GALLIUM ARSENIDE--OPTICAL PROPERTIES;

EID: 0024705608     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/50.29631     Document Type: Article
Times cited : (26)

References (27)
  • 1
    • 0020907910 scopus 로고
    • Monolithic integration of curved waveguides and channeled-substrate DH lasers by wet chemical etching
    • Y. Yuan, L. Perillo, and J.L. Merz, “Monolithic integration of curved waveguides and channeled-substrate DH lasers by wet chemical etching,” J. Lightwave Technol., vol. LT-1, pp. 630–637, 1983.
    • (1983) J. Lightwave Technol. , vol.1 LT , pp. 630-637
    • Yuan, Y.1    Perillo, L.2    Merz, J.L.3
  • 2
    • 0021422498 scopus 로고
    • Monolitic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode
    • N. Bar-Chaim, K.Y. Lau, I. Ury, and A. Yariv, “Monolitic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode,” Appl. Phys. Lett., vol. 44, pp. 941–943, 1984.
    • (1984) Appl. Phys. Lett. , vol.44 , pp. 941-943
    • Bar-Chaim, N.1    Lau, K.Y.2    Ury, I.3    Yariv, A.4
  • 3
    • 3943079397 scopus 로고
    • Low-loss single-mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy
    • E. Kapon and R. Bhat, “Low-loss single-mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy,” Appl. Phys. Lett., vol. 50, pp. 1628–1630, 1987.
    • (1987) Appl. Phys. Lett. , vol.50 , pp. 1628-1630
    • Kapon, E.1    Bhat, R.2
  • 4
    • 0001414849 scopus 로고
    • Scattering in low-loss GaAs/AlGaAs rib waveguides
    • R.J. Deri, E. Kapon, and L.M. Schiavone, “Scattering in low-loss GaAs/AlGaAs rib waveguides,” Appl. Phys. Lett., vol. 51, pp. 789–791, 1987.
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 789-791
    • Deri, R.J.1    Kapon, E.2    Schiavone, L.M.3
  • 6
    • 0020782171 scopus 로고
    • Attenuation measurements on MOCVD-grown GaAs/GaAlAs optical waveguides
    • R.G. Walker and R.C. Goodfellow, “Attenuation measurements on MOCVD-grown GaAs/GaAlAs optical waveguides,” Electron. Lett., vol. 19, pp. 590–592, 1983.
    • (1983) Electron. Lett. , vol.19 , pp. 590-592
    • Walker, R.G.1    Goodfellow, R.C.2
  • 8
    • 0023327113 scopus 로고
    • Very low-loss GalnAs/InP optical waveguides for the 10.6 (im wavelength
    • D. Delacourt, M. Papuchon, M.A. Di Forte-Poisson, and M. Razeghi, “Very low-loss GalnAs/InP optical waveguides for the 10.6 (im wavelength,” Electron. Lett., vol. 23, pp. 451–453, 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 451-453
    • Delacourt, D.1    Papuchon, M.2    Di Forte-Poisson, M.A.3    Razeghi, M.4
  • 9
    • 0023648825 scopus 로고
    • Narrow, high- NA GaAs/GaAlAs optical waveguides with losses below 0.7 + 0.1 dB cm-1
    • R.G. Walker, H.E. Shephard, and R.R. Bradley, “Narrow, high- NA GaAs/GaAlAs optical waveguides with losses below 0.7 + 0.1 dB cm-1,” Electron. Lett., vol. 23, pp. 362–364, 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 362-364
    • Walker, R.G.1    Shephard, H.E.2    Bradley, R.R.3
  • 10
    • 0020721491 scopus 로고
    • Small-radii curved rib waveguides in GaAs/GaAlAs using electron-beam lithography
    • M.W. Austin and P.G. Flavin, “Small-radii curved rib waveguides in GaAs/GaAlAs using electron-beam lithography,” J. Lightwave Technol., vol. LT-1, pp. 236–240, 1983.
    • (1983) J. Lightwave Technol. , vol.1 LT , pp. 236-240
    • Austin, M.W.1    Flavin, P.G.2
  • 11
    • 0021371110 scopus 로고
    • Etched-wall bent-guide structure for integrated optics in the III-V semiconductors
    • T.M. Benson, “Etched-wall bent-guide structure for integrated optics in the III-V semiconductors,” J. Lightwave Technol., vol. LT-2, pp. 31–34, 1984.
    • (1984) J. Lightwave Technol. , vol.2 LT , pp. 31-34
    • Benson, T.M.1
  • 12
    • 0022755325 scopus 로고
    • Bend losses in GaAs/AlGaAs optical waveguides
    • R.J. Deri, E. Kapon, and L.M. Schiavone, “Bend losses in GaAs/AlGaAs optical waveguides,” Electron. Lett., vol. 23, pp. 845–847, 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 845-847
    • Deri, R.J.1    Kapon, E.2    Schiavone, L.M.3
  • 13
    • 0023043581 scopus 로고
    • GaAs/AlGaAs directional coupler switch with submillimetre device length
    • H. Takeuchi, K. Nagata, H. Kawaguchi, and K. Oe, “GaAs/AlGaAs directional coupler switch with submillimetre device length,” Electron. Lett., vol. 22, pp. 1241–1243, 1986.
    • (1986) Electron. Lett. , vol.22 , pp. 1241-1243
    • Takeuchi, H.1    Nagata, K.2    Kawaguchi, H.3    Oe, K.4
  • 14
    • 0022075408 scopus 로고
    • Simple and accurate loss measurement technique for semiconductor optical waveguides
    • R.G. Walker, “Simple and accurate loss measurement technique for semiconductor optical waveguides,” Electron. Lett., vol. 21, pp. 581–583, 1985.
    • (1985) Electron. Lett. , vol.21 , pp. 581-583
    • Walker, R.G.1
  • 15
    • 0023328089 scopus 로고
    • Single mode GaAs/AlGaAs miniature optical waveguide with low transmission loss coefficient
    • H. Takeuchi, H. Yasaka, Y. Yoshikuni, and K. Oe, “Single mode GaAs/AlGaAs miniature optical waveguide with low transmission loss coefficient,” Trans. IE1CE, vol. E70, pp. 267–268, 1987.
    • (1987) Trans. IE1CE , vol.70 E , pp. 267-268
    • Takeuchi, H.1    Yasaka, H.2    Yoshikuni, Y.3    Oe, K.4
  • 16
    • 0022812033 scopus 로고
    • Regimes of feedback effects in 1.5-/*m distributed feedback lasers
    • R.W. Tkach and A.R. Chraplyvy, “Regimes of feedback effects in 1.5-/*m distributed feedback lasers,” J. Lightwave Technol., vol. LT-4, pp. 1655–1661, 1986.
    • (1986) J. Lightwave Technol. , vol.4 LT , pp. 1655-1661
    • Tkach, R.W.1    Chraplyvy, A.R.2
  • 17
    • 0015354762 scopus 로고
    • Reflectivity of mode at facet and ossillation mode in doubleheterostructure injection lasers
    • T. Ikegami, “Reflectivity of mode at facet and ossillation mode in doubleheterostructure injection lasers,” IEEE J. Quantum Electron., vol. QE-8, pp. 470–476, 1972.
    • (1972) IEEE J. Quantum Electron. , vol.8 QE , pp. 470-476
    • Ikegami, T.1
  • 18
    • 0343057232 scopus 로고
    • Gallium-Arsenide electro-optic modulators
    • T.E. Walsh, “Gallium-Arsenide electro-optic modulators,” RCA Rev., pp. 321–335, 1966.
    • (1966) RCA Rev. , pp. 321-335
    • Walsh, T.E.1
  • 19
    • 0020718484 scopus 로고
    • Refractive index of GaAs/AlAs superlattice grown by MBE
    • Y. Suzuki and H. Okamoto, “Refractive index of GaAs/AlAs superlattice grown by MBE,” J. Electronic Mat., vol. 12, pp. 397–411, 1983.
    • (1983) J. Electronic Mat. , vol.12 , pp. 397-411
    • Suzuki, Y.1    Okamoto, H.2
  • 20
    • 21544435781 scopus 로고
    • Refractive index of GaAs
    • D.T.F. Marple, “Refractive index of GaAs,” J. Appl. Phys., vol. 35, pp. 1241–1242, 1964.
    • (1964) J. Appl. Phys. , vol.35 , pp. 1241-1242
    • Marple, D.T.F.1
  • 21
    • 0002751581 scopus 로고
    • Refractive index of AlvGa,-vAs between 1.2 and 1.8 eV
    • H.C. Casey Jr., D.D. Sell, and M.B. Panish, “Refractive index of AlvGa,-vAs between 1.2 and 1.8 eV,” Appl. Phys. Lett., vol. 24, pp. 63–65, 1974.
    • (1974) Appl. Phys. Lett. , vol.24 , pp. 63-65
    • Casey, H.C.1    Sell, D.D.2    Panish, M.B.3
  • 22
    • 0018483701 scopus 로고
    • Composition and refractive index of Ga,-vAlvAs determined by ellipsometry
    • E. Kuphal and H.W. Dinges, “Composition and refractive index of Ga,-vAlvAs determined by ellipsometry,” J. Appl. Phys., vol. 50, pp. 4196–4200, 1979.
    • (1979) J. Appl. Phys. , vol.50 , pp. 4196-4200
    • Kuphal, E.1    Dinges, H.W.2
  • 23
    • 0015108624 scopus 로고
    • Refractive index of AlAs
    • R.E. Fern and A. Onton, “Refractive index of AlAs,” J. Appl. Phys., vol. 42, pp. 3499–3500, 1971.
    • (1971) J. Appl. Phys. , vol.42 , pp. 3499-3500
    • Fern, R.E.1    Onton, A.2
  • 24
    • 0017516766 scopus 로고
    • Absorption, refractive index, and birefringence of AlAs-GaAs monolayers
    • J.P. van der Ziel and A.C. Gossard, “Absorption, refractive index, and birefringence of AlAs-GaAs monolayers,” /. Appl. Phys., vol. 48, pp. 3018–3023, 1977.
    • (1977) /. Appl. Phys. , vol.48 , pp. 3018-3023
    • van der Ziel, J.P.1    Gossard, A.C.2
  • 25
    • 33646424593 scopus 로고
    • GaAs, AlAs, and AlTGa,-vAs: Material parameters for use in research and device applications
    • S. Adachi, “GaAs, AlAs, and AlTGa,-vAs: Material parameters for use in research and device applications,” J. Appl. Phys., vol. 58, pp. R1-R29, 1985.
    • (1985) J. Appl. Phys. , vol.58 , pp. R1-R29
    • Adachi, S.1
  • 26
    • 36149007117 scopus 로고
    • Infrared absorption and electron effective mass in n-type gallium arsenide
    • W.G. Spitzer and J.M. Whelan, “Infrared absorption and electron effective mass in n-type gallium arsenide,” Phys. Rev., vol. 114, pp. 59–63, 1959.
    • (1959) Phys. Rev. , vol.114 , pp. 59-63
    • Spitzer, W.G.1    Whelan, J.M.2
  • 27
    • 0010259062 scopus 로고
    • 2nd ed. Berlin, Heidelberg, New York, Tokyo: Springer-Verlag
    • R.G. Hunsperger, Integrated Optics: Theory and Technology, 2nd ed. Berlin, Heidelberg, New York, Tokyo: Springer-Verlag, 1984, pp. 79–82.
    • (1984) Integrated Optics: Theory and Technology , pp. 79-82
    • Hunsperger, R.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.