-
1
-
-
0020907910
-
Monolithic integration of curved waveguides and channeled-substrate DH lasers by wet chemical etching
-
Y. Yuan, L. Perillo, and J.L. Merz, “Monolithic integration of curved waveguides and channeled-substrate DH lasers by wet chemical etching,” J. Lightwave Technol., vol. LT-1, pp. 630–637, 1983.
-
(1983)
J. Lightwave Technol.
, vol.1 LT
, pp. 630-637
-
-
Yuan, Y.1
Perillo, L.2
Merz, J.L.3
-
2
-
-
0021422498
-
Monolitic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode
-
N. Bar-Chaim, K.Y. Lau, I. Ury, and A. Yariv, “Monolitic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode,” Appl. Phys. Lett., vol. 44, pp. 941–943, 1984.
-
(1984)
Appl. Phys. Lett.
, vol.44
, pp. 941-943
-
-
Bar-Chaim, N.1
Lau, K.Y.2
Ury, I.3
Yariv, A.4
-
3
-
-
3943079397
-
Low-loss single-mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy
-
E. Kapon and R. Bhat, “Low-loss single-mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy,” Appl. Phys. Lett., vol. 50, pp. 1628–1630, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.50
, pp. 1628-1630
-
-
Kapon, E.1
Bhat, R.2
-
4
-
-
0001414849
-
Scattering in low-loss GaAs/AlGaAs rib waveguides
-
R.J. Deri, E. Kapon, and L.M. Schiavone, “Scattering in low-loss GaAs/AlGaAs rib waveguides,” Appl. Phys. Lett., vol. 51, pp. 789–791, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.51
, pp. 789-791
-
-
Deri, R.J.1
Kapon, E.2
Schiavone, L.M.3
-
5
-
-
0022221706
-
Low loss GaAs optical waveguides
-
H. Inoue, K. Hiruma, K. Ishida, T. Asai, and H. Matsumura, “Low loss GaAs optical waveguides,” J. Lightwave Technol., vol. LT-3, pp. 1270–1276, 1985.
-
(1985)
J. Lightwave Technol.
, vol.3 LT
, pp. 1270-1276
-
-
Inoue, H.1
Hiruma, K.2
Ishida, K.3
Asai, T.4
Matsumura, H.5
-
6
-
-
0020782171
-
Attenuation measurements on MOCVD-grown GaAs/GaAlAs optical waveguides
-
R.G. Walker and R.C. Goodfellow, “Attenuation measurements on MOCVD-grown GaAs/GaAlAs optical waveguides,” Electron. Lett., vol. 19, pp. 590–592, 1983.
-
(1983)
Electron. Lett.
, vol.19
, pp. 590-592
-
-
Walker, R.G.1
Goodfellow, R.C.2
-
7
-
-
0023364990
-
Low-loss single-mode InP/InGaAsP waveguides grown by MOVPE
-
P.W.A. Mcilroy, P.M. Rodgers, J.S. Singh, P.C. Spurdens, and I.D. Henning, “Low-loss single-mode InP/InGaAsP waveguides grown by MOVPE,” Electron. Lett., vol. 23, pp. 701–703, 1987.
-
(1987)
Electron. Lett.
, vol.23
, pp. 701-703
-
-
Mcilroy, P.W.A.1
Rodgers, P.M.2
Singh, J.S.3
Spurdens, P.C.4
Henning, I.D.5
-
8
-
-
0023327113
-
Very low-loss GalnAs/InP optical waveguides for the 10.6 (im wavelength
-
D. Delacourt, M. Papuchon, M.A. Di Forte-Poisson, and M. Razeghi, “Very low-loss GalnAs/InP optical waveguides for the 10.6 (im wavelength,” Electron. Lett., vol. 23, pp. 451–453, 1987.
-
(1987)
Electron. Lett.
, vol.23
, pp. 451-453
-
-
Delacourt, D.1
Papuchon, M.2
Di Forte-Poisson, M.A.3
Razeghi, M.4
-
9
-
-
0023648825
-
Narrow, high- NA GaAs/GaAlAs optical waveguides with losses below 0.7 + 0.1 dB cm-1
-
R.G. Walker, H.E. Shephard, and R.R. Bradley, “Narrow, high- NA GaAs/GaAlAs optical waveguides with losses below 0.7 + 0.1 dB cm-1,” Electron. Lett., vol. 23, pp. 362–364, 1987.
-
(1987)
Electron. Lett.
, vol.23
, pp. 362-364
-
-
Walker, R.G.1
Shephard, H.E.2
Bradley, R.R.3
-
10
-
-
0020721491
-
Small-radii curved rib waveguides in GaAs/GaAlAs using electron-beam lithography
-
M.W. Austin and P.G. Flavin, “Small-radii curved rib waveguides in GaAs/GaAlAs using electron-beam lithography,” J. Lightwave Technol., vol. LT-1, pp. 236–240, 1983.
-
(1983)
J. Lightwave Technol.
, vol.1 LT
, pp. 236-240
-
-
Austin, M.W.1
Flavin, P.G.2
-
11
-
-
0021371110
-
Etched-wall bent-guide structure for integrated optics in the III-V semiconductors
-
T.M. Benson, “Etched-wall bent-guide structure for integrated optics in the III-V semiconductors,” J. Lightwave Technol., vol. LT-2, pp. 31–34, 1984.
-
(1984)
J. Lightwave Technol.
, vol.2 LT
, pp. 31-34
-
-
Benson, T.M.1
-
12
-
-
0022755325
-
Bend losses in GaAs/AlGaAs optical waveguides
-
R.J. Deri, E. Kapon, and L.M. Schiavone, “Bend losses in GaAs/AlGaAs optical waveguides,” Electron. Lett., vol. 23, pp. 845–847, 1987.
-
(1987)
Electron. Lett.
, vol.23
, pp. 845-847
-
-
Deri, R.J.1
Kapon, E.2
Schiavone, L.M.3
-
13
-
-
0023043581
-
GaAs/AlGaAs directional coupler switch with submillimetre device length
-
H. Takeuchi, K. Nagata, H. Kawaguchi, and K. Oe, “GaAs/AlGaAs directional coupler switch with submillimetre device length,” Electron. Lett., vol. 22, pp. 1241–1243, 1986.
-
(1986)
Electron. Lett.
, vol.22
, pp. 1241-1243
-
-
Takeuchi, H.1
Nagata, K.2
Kawaguchi, H.3
Oe, K.4
-
14
-
-
0022075408
-
Simple and accurate loss measurement technique for semiconductor optical waveguides
-
R.G. Walker, “Simple and accurate loss measurement technique for semiconductor optical waveguides,” Electron. Lett., vol. 21, pp. 581–583, 1985.
-
(1985)
Electron. Lett.
, vol.21
, pp. 581-583
-
-
Walker, R.G.1
-
15
-
-
0023328089
-
Single mode GaAs/AlGaAs miniature optical waveguide with low transmission loss coefficient
-
H. Takeuchi, H. Yasaka, Y. Yoshikuni, and K. Oe, “Single mode GaAs/AlGaAs miniature optical waveguide with low transmission loss coefficient,” Trans. IE1CE, vol. E70, pp. 267–268, 1987.
-
(1987)
Trans. IE1CE
, vol.70 E
, pp. 267-268
-
-
Takeuchi, H.1
Yasaka, H.2
Yoshikuni, Y.3
Oe, K.4
-
16
-
-
0022812033
-
Regimes of feedback effects in 1.5-/*m distributed feedback lasers
-
R.W. Tkach and A.R. Chraplyvy, “Regimes of feedback effects in 1.5-/*m distributed feedback lasers,” J. Lightwave Technol., vol. LT-4, pp. 1655–1661, 1986.
-
(1986)
J. Lightwave Technol.
, vol.4 LT
, pp. 1655-1661
-
-
Tkach, R.W.1
Chraplyvy, A.R.2
-
17
-
-
0015354762
-
Reflectivity of mode at facet and ossillation mode in doubleheterostructure injection lasers
-
T. Ikegami, “Reflectivity of mode at facet and ossillation mode in doubleheterostructure injection lasers,” IEEE J. Quantum Electron., vol. QE-8, pp. 470–476, 1972.
-
(1972)
IEEE J. Quantum Electron.
, vol.8 QE
, pp. 470-476
-
-
Ikegami, T.1
-
18
-
-
0343057232
-
Gallium-Arsenide electro-optic modulators
-
T.E. Walsh, “Gallium-Arsenide electro-optic modulators,” RCA Rev., pp. 321–335, 1966.
-
(1966)
RCA Rev.
, pp. 321-335
-
-
Walsh, T.E.1
-
19
-
-
0020718484
-
Refractive index of GaAs/AlAs superlattice grown by MBE
-
Y. Suzuki and H. Okamoto, “Refractive index of GaAs/AlAs superlattice grown by MBE,” J. Electronic Mat., vol. 12, pp. 397–411, 1983.
-
(1983)
J. Electronic Mat.
, vol.12
, pp. 397-411
-
-
Suzuki, Y.1
Okamoto, H.2
-
20
-
-
21544435781
-
Refractive index of GaAs
-
D.T.F. Marple, “Refractive index of GaAs,” J. Appl. Phys., vol. 35, pp. 1241–1242, 1964.
-
(1964)
J. Appl. Phys.
, vol.35
, pp. 1241-1242
-
-
Marple, D.T.F.1
-
21
-
-
0002751581
-
Refractive index of AlvGa,-vAs between 1.2 and 1.8 eV
-
H.C. Casey Jr., D.D. Sell, and M.B. Panish, “Refractive index of AlvGa,-vAs between 1.2 and 1.8 eV,” Appl. Phys. Lett., vol. 24, pp. 63–65, 1974.
-
(1974)
Appl. Phys. Lett.
, vol.24
, pp. 63-65
-
-
Casey, H.C.1
Sell, D.D.2
Panish, M.B.3
-
22
-
-
0018483701
-
Composition and refractive index of Ga,-vAlvAs determined by ellipsometry
-
E. Kuphal and H.W. Dinges, “Composition and refractive index of Ga,-vAlvAs determined by ellipsometry,” J. Appl. Phys., vol. 50, pp. 4196–4200, 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, pp. 4196-4200
-
-
Kuphal, E.1
Dinges, H.W.2
-
23
-
-
0015108624
-
Refractive index of AlAs
-
R.E. Fern and A. Onton, “Refractive index of AlAs,” J. Appl. Phys., vol. 42, pp. 3499–3500, 1971.
-
(1971)
J. Appl. Phys.
, vol.42
, pp. 3499-3500
-
-
Fern, R.E.1
Onton, A.2
-
24
-
-
0017516766
-
Absorption, refractive index, and birefringence of AlAs-GaAs monolayers
-
J.P. van der Ziel and A.C. Gossard, “Absorption, refractive index, and birefringence of AlAs-GaAs monolayers,” /. Appl. Phys., vol. 48, pp. 3018–3023, 1977.
-
(1977)
/. Appl. Phys.
, vol.48
, pp. 3018-3023
-
-
van der Ziel, J.P.1
Gossard, A.C.2
-
25
-
-
33646424593
-
GaAs, AlAs, and AlTGa,-vAs: Material parameters for use in research and device applications
-
S. Adachi, “GaAs, AlAs, and AlTGa,-vAs: Material parameters for use in research and device applications,” J. Appl. Phys., vol. 58, pp. R1-R29, 1985.
-
(1985)
J. Appl. Phys.
, vol.58
, pp. R1-R29
-
-
Adachi, S.1
-
26
-
-
36149007117
-
Infrared absorption and electron effective mass in n-type gallium arsenide
-
W.G. Spitzer and J.M. Whelan, “Infrared absorption and electron effective mass in n-type gallium arsenide,” Phys. Rev., vol. 114, pp. 59–63, 1959.
-
(1959)
Phys. Rev.
, vol.114
, pp. 59-63
-
-
Spitzer, W.G.1
Whelan, J.M.2
-
27
-
-
0010259062
-
-
2nd ed. Berlin, Heidelberg, New York, Tokyo: Springer-Verlag
-
R.G. Hunsperger, Integrated Optics: Theory and Technology, 2nd ed. Berlin, Heidelberg, New York, Tokyo: Springer-Verlag, 1984, pp. 79–82.
-
(1984)
Integrated Optics: Theory and Technology
, pp. 79-82
-
-
Hunsperger, R.G.1
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