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Volumn , Issue , 1997, Pages 409-412
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InGaAs/InP p-i-n heterostructure photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy
a b b b a c a b |
Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM GALLIUM ARSENIDE;
ANTIREFLECTION COATINGS;
BANDWIDTH;
GALLIUM ARSENIDE;
III-V SEMICONDUCTORS;
INDIUM PHOSPHIDE;
INTEGRATED OPTOELECTRONICS;
ION BEAMS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
OPTOELECTRONIC DEVICES;
PHOTODETECTORS;
PHOTODIODES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR ALLOYS;
SUBSTRATES;
WAVEGUIDES;
CHEMICALLY ASSISTED ION BEAM ETCHING;
ELECTRONIC COMPONENT;
MOLECULAR BEAM EPITAXIAL GROWTH;
PHOTODETECTOR STRUCTURE;
PHOTODIODE ARRAYS;
PHOTORESPONSIVITY;
SOLID SOURCE MOLECULAR BEAM EPITAXY;
WAVEGUIDE FILMS;
HETEROJUNCTIONS;
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EID: 67651119149
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISCS.1998.711673 Document Type: Conference Paper |
Times cited : (3)
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References (9)
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