Ultrawide-Band Long-Wavelength p-i-n Photodetectors

Journal of Lightwave Technology

Volumn 5, Issue 10, 1987, Pages 1339-1350

  Bowers, John E ^a   Burrus, Charles A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL COMMUNICATION EQUIPMENT; PHOTODETECTORS;

OPTICAL FIBER RECEIVERS; P-I-N PHOTODIODES;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0023670581     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/JLT.1987.1075419     Document Type: Article

References (56)

1. A. H. Gnauck and J. E. Bowers, “16-Gbit/s direct modulation of an InGaAsP laser,” presented at Top, Meet. Picosecond Electronics and Optoelectronics, Incline Village, NV, 1987, pap, WE-18.
2. J. E. Bowers, A. C. Chipaloski, S. Boodughians, and J. W. Carlin, “Direct fiber-optic transmission of entire microwave satellite antenna signals,” Electron. Lett., vol. 23, pp. 185–187, 1987.
3. M. Brain and T. P. Lee, “Low-noise optical receiver for high-speed optical transmission,” J. Lightwave Technol., vol. LT-3, pp. 1281– 1300, 1985,
4. D. H. Auston, “Response of photoconductors in transmission lines,” IEEE J. Quantum Electron, vol. QE-19, pp. 639–648, 1983.
5. D. W. Dolfi, R. L. Jungerman, and M. Nazarathy, “1.3-μm LiNbO 3 modulator with bandwidth greater than 24 GHz, ” presented at Optical Fiber Commun. Conf., Reno, NV, 1987, PDP4.
6. S. K. Korotky, G. Eisenstein, R. S. Tucker, J. J. Veselka, and G. Raybon, “Optical modulation above 20 GHz using a waveguide electrooptic switch,” presented at Top, Meet, Picosecond Electronics and Optoelectronics, Incline Village, NV, 1987, pap. FB4.
7. J. E. Bowers, “Millimeter-wave response of InGaAsP lasers,” Electron Lett., vol. 21, p, 1195, 1985,
8. R. Olshansky, V. Lanzisera, C. B Su, W. Powazinik, and R. B, Lauer, “Frequency responses of an InGaAsP vapor phase regrown buried heterostructure laser with 18 GHz bandwidth,” Appl. Phys. Lett., vol. 49, pp. 128–130, 1986.
9. J. C. Campbell, W. T. Tsang, G. J. Qua, and J. E. Bowers, “InP/InGaAsP/InGaAs avalanche photodiodes with 70-GHz gain-bandwidth product,” Appl. Phys. Lett., vol. 51, 1987.
10. S. Y. Wang and D. M. Bloom, “100-GHz bandwidth planar GaAs Schottky diode,” Electron. Lett., vol. 19, pp. 554–555, 1983.
11. T. H. Windhom, L. W. Cook, and G. E. Stillman, “Temperature dependent electron velocity field characteristics for In 0.53 Ga 0.47 As at high electronic fields,” J. Electron. Mat., vol. 11, pp. 1065–1082, 1982.
12. T. P. Pearsall, Ed., GaInAsP Alloy Semiconductors. New York: Wiley, 1982.
13. P. Hill, J. Schlafer, W. Powazinik, M. Urban, E. Eichen, and R. Olshansky, “Measurement of hole velocity in n-type InGaAs,” Appl. Phys. Lett., vol. 50, pp. 1260-1262, 1987.
14. K.-H. Hellwcge, Ed., Landolt-Bornstein Numerical Data and Functional Relationships in Science and Technology, Vol. 17, Physics of Group IV Elements and III-V Compounds, O. Madelung, Ed. New York: Springer-Verlag, 1982, 532–533.
15. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981,
16. G. Lucovsky, R. F. Scharz, and R. B. Emmons, “Transit-time considerations in p-i-n diodes,” J. Appl. Phys., vol. 35, pp. 622–628, 1964.
17. J. E. Bowers, C. A. Btirrus, and R. J. McCoy, “InGaAs p-i-n photodetectors with modulation response to millimeter wavelengths,” Electron. Lett., vol. 21, pp. 812-814, 1985.
18. D. A. Humphreys, R. J. King, D. Jenkins, and A. J. Moseley, “Measurement of absorption coefficients of Ga 0.47 In 0.53 As over the wavelength range 1.0-1.7 μn,” Electron. Lett., vol. 21, pp. 1187-1189, 1985.
19. Y. S. Chen, unpublished.
20. H. Melchior, “Demodulation and photodetection techniques,” in Laser Handbook, vol. 1, F. T. Areckhi and E. O. Schulz-Dubois, Eds. Amsterdam, The Netherlands: North-Holland, 1972, pp. 725– 835,
21. O. Krumpholz and S. Maslowski, “Schnelle photodioden mit wellenlangenabhangigen demodulation seigensschaften,” Z. F. Angew. Phys., vol. 25, 156, 1968.
22. J. Conradi, F. P. Kapron, and J. C. Dyment, IEEE Trans. Electron Dev., vol. ED-25, pp. 180, 1978.
23. H. Temkin, A. Antreasyan, T. P. Pearsall, J. C. Bean, and N. A. Olsson, “1.3-μm avalanche photodiodes formed by waveguiding in Ge x Si 1-x strained layer superlattice,” presented at Int. Guided Wave Optics Conf., 1986.
24. J. E. Bowers and C. A. Burrus. “High-speed zero bias waveguide photodetectors,” Electron. Lett., vol. 22, pp. 905–906, 1986.
25. J. E. Bowers, W. Y. Jan, W, T. Tsang, and C. A. Burrus, unpublished.
26. S. R. Forrest, O. K. Kim, and R. G. Smith, “Optical response time of InGaAS avalanche photodiodes,” Appl. Phys. Lett., vol. 41, pp. 95–98, 1982.
27. F. Capasso, K. Mohammed, and A. Y. Cho, “Resonant tunneling through double barriers, perpendicular quantum transparent phenomena in superlattices and their device applications,” IEEE J. Quantum Electron, vol. QE-22, pp. 1853–1869, 1986.
28. T. P. Pearsall and M. A. Pollack, “Compound semiconductor photodiodes,” in Semiconductors and Semimetals, R. K. Williardson and A. C. Beer, Eds., vol. 22, Lightwave Communications Technology, Part D, Photodetectors, W. T. Tsang, vol. Ed. New York: Academic, 1985, pp. 173–245.
29. K. Li, E. Rezek, and H. D. Law, “InGaAs p-i-n photodiode fabricated on semiinsulating InP substrate for monolithic integration,” Electron. Lett., vol. 20, pp. 196–199, 1984.
30. B. L. Kasper, “Receiver design, ” in Optical Fiber Telecommunications II, S. E. Miller and I. P. Kaminow, Eds. New York: Academic, 1987.
31. C. A. Burrus, A. G. Dentai, and T. P. Lee, “InGaAsP p-i-n photodiodes with low dark current and small capacitance, “ Electron. Lett., vol. 15, pp. 655–657, 1979.
32. T. P. Lee, C. A. Burrus, and A. G. Dentai, “InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.965-1.65 wave-length,” IEEE J. Quantum Electron, vol. QE-17, pp. 232–238, 1981.
33. G. H. Olsen, “Low-leakage high-efficiency, reliable VPE InGaAs 1.0-1-7 μ m photodiodes, “ IEEE Electron Device Lett., vol. EDL-2, pp. 217–219, 1981.
34. S. Y. Wang, K. W. Carey, and B. H. Kolner, “Front-side illuminated InP/GalnAs/InP p-i-n photodiode with -3-dB bandwidth in excess of 18 GHz, “ IEEE Trans. Electron Dev., vol. 34, Apr. 1987.
35. O. K. Kim, B. V. Dutt, R. J. McCoy, and J. R. Zuber, “A low dark-current, planar InGaAs p-i-n photodiode with a quaternary InGaAsP cap laver,” IEEE J. Quantum Electron, vol. QE-2K pp. 138–143, 1985.
36. R. H. Saul, F. S. Chen, and P. W. Shumate, “Reliability of InGaAs photodiodes for SL applications,” AT&T Tech. J., vol. 64, pp. 861-882, 1985.
37. H. Temkin, R. E. Frahm, N. A. Olsson, C. A. Burrus, and R. J. McCoy, “Very high-speed operation of planar InGaAs/InP photodiode detectors,” Electron. Lett., vol. 22, pp. 1267–1269, 1986.
38. R. S. Tucker, A. J. Taylor, C. A. Burrus, G. Eisenstein, and J. M. Wiesenfeld, “Coaxially mounted 67-GHz bandwidth InGaAs p-i-n photodiode,” Electron. Lett., vol. 22. pp. 917–918, Aug. 14, 1986.
39. H. P. Model #11970A and 11970K.
40. S. Y. Wang, D. M. Bloom, and F. David, unpublished.
41. J. E. Bowers, C. A. Burrus, and F. Mitschke, “Millimeter-wave-guide-mounted InGaAs photodetectors,” Electron. Lett., vol. 22, pp. 633–635, June 5, 1986.
42. J. A. Valdmanis and G. Mourou, “Subpicosecond electrooptic sampling: Principles and applications,” J. Quantum Electron, vol. QE-22, pp. 69–78, 1986.
43. B. H. Kolner and D. M. Bloom, “ ‘Electrooptic sampling in GaAs integrated circuits,” J. Quantum Electron, vol. QE-22, pp. 79–93, 1986.
44. L. F. Mollenauer and R. F. Stolen, “The soliton laser,” Opt. Lett., vol. 9, pp. 13–15, 1984.
45. M. Islam and L. F. Mollenauer, “Fiber Raman amplification soliton laser,” in IQEC Tech. Dig., 1986, pap. TuHH1.
46. S. K. Korotky, unpublished.
47. P. M. Downey, J. E. Bowers, C. A. Burrus, F. Mitschke, and L. F. Mollenauer, “High-speed hybrid InGaAs p-i-n/photoconductor circuit,” Appl. Phys. Lett., vol. 49, pp. 430–431. 1986.
48. T. F. Carruthers and J. F. Weller, “Picosecond optical mixing in fast photodiodes,” Appl. Phys. Lett., vol. 48, pp. 460–462, 1986.
49. C. A. Burrus, J. E. Bowers, and R. S. Tucker, “Improved very-high-speed packaged InGaAs p-i-n punch-through photodiode,” Electron. Lett., vol. 21, pp. 262–263, 1985,
50. L. Piccari and P. Spano, “New method for measuring ultrawide frequency response of optical detectors,” Electron. Lett., vol. 18, pp. 116-117, 1982.
51. R. Schimpe, J. E. Bowers, and T. L. Koch, “Characterization of frequency response of 1.5-μm InGaAsP DFB laser diode and InGaAs p-i-n photodiode by heterodyne measurement technique,” Electron. Lett., vol. 22, pp. 453–454, 1986.
52. E. Eichen and A. Silletti, “The FM sideband technique for measuring the frequency response of ultrahigh frequency optical detectors,” presented at Top. Conf. Opt. Fiber Commun., Reno, NV, 1987, pap. MJ4.
53. J. C. Campbell, C. A. Burrus, A. G. Dentai, and K. Ogawa, “Small-area high-speed InGaAs/InP phototransistor,” Appl. Phys. Lett., vol. 39, pp, 820–821, 1981.
54. C. A. Burrus, T. P. Lee, and A. G. Dentai, “Short-cavity singlemode 1.3-μm InGaAsP lasers with evaporated high-reflectivity mirrors, “ Electron. Lett., vol. 17, pp. 954–956, 1981.
55. M. A. Washington, R. E. Nahory, M. A. Pollack, and E. D. Beebe, “High-efficiency ln 1-x Ga x As y P y /InP photodiodes withselective wavelength response between 0.9 and 1.7 μm, “ Appl. Phys. Lett., vol. 33, pp. 854–856, 1978.
56. J. E. Bowers, A. K. Srivastava, C. A. Burrus, J. C. DeWinter, M. A. Pollack, and J. L. Zyskind, “High-speed GaInAsSb/GaSb p-i-n photodetectors for wavelengths to 2.3 μm, ” Electron. Lett., vol. 22, pp. 137–138, 1986.