GaInNAs lattice-matched to GaAs for photodiodes

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 347-349

  Ng, J S ^a   Soong, W M ^a   Steer, M J ^a   Hopkinson, M ^a   David, J P R ^a   Chamings, J ^b   Adams, A R ^b   Sweeney, S J ^b   Allam, J ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DARK CURRENTS; DIODES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; WAVELENGTH;

LATTICE-MATCHING; POST-GROWTH ANNEALING; WAVELENGTH ABSORPTION;

PHOTODIODES;

EID: 34748879434     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381194     Document Type: Conference Paper

References (11)

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