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Volumn 80, Issue 19, 2002, Pages 3557-3559

Hall mobility enhancement caused by annealing of Si0.2Ge 0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures

(4) Myronov, M a Phillips, P J a Whall, T E a Parker, E H C a

a UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING TEMPERATURES; AS-GROWN; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; MOBILITY ENHANCEMENT; MODULATION-DOPED; P-TYPE; SHEET CARRIER DENSITIES; STRUCTURAL CHARACTERIZATION; TEMPERATURE RANGE; THERMAL-ANNEALING;

ANNEALING; CARRIER CONCENTRATION; CRYSTALS; ELECTRON ABSORPTION; GERMANIUM; HALL MOBILITY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER MOBILITY;

EID: 79956036990 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1478779 Document Type: Article

Times cited : (12)

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