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Volumn , Issue , 2008, Pages 94-98

VHDL-AMS implementation of a numerical ballistic CNT model for logic circuit simulation

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORTS; CARBON NANOTUBE TRANSISTORS; CUBIC SPLINE; MODELLING METHOD; NON EQUILIBRIUM; NONLINEAR APPROXIMATION; RMS ERRORS; SPEED-UP; THEORETICAL MODELLING; VHDL-AMS;

EID: 67650507739     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/FDL.2008.4641428     Document Type: Conference Paper
Times cited : (7)

References (15)
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  • 3
    • 33947620020 scopus 로고    scopus 로고
    • Arash Hazeghi, Tejas Krishnamohan, and H.-S. Philip Wong. Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling. In Sixth IEEE Conference on Electron Devices, 54, Lausanne, Switzerland, March 2007.
    • Arash Hazeghi, Tejas Krishnamohan, and H.-S. Philip Wong. Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling. In Sixth IEEE Conference on Electron Devices, volume 54, Lausanne, Switzerland, March 2007.
  • 5
    • 20344368353 scopus 로고    scopus 로고
    • Semi-empirical SPICE models for carbon nanotube FET logic
    • Munich, Germany, 16-19 Aug
    • Chris Dwyer, Moky Cheung, and Daniel J. Sorin. Semi-empirical SPICE models for carbon nanotube FET logic. In 4th IEEE Conference on Nanotechnology, Munich, Germany, 16-19 Aug. 2004.
    • (2004) 4th IEEE Conference on Nanotechnology
    • Dwyer, C.1    Cheung, M.2    Sorin, D.J.3
  • 6
    • 42549141193 scopus 로고    scopus 로고
    • An efficient and symbolic model for charge densities in ballistic carbon nanotube FETs
    • June
    • Hamidreza Hashempour and Fabrizio Lombardi. An efficient and symbolic model for charge densities in ballistic carbon nanotube FETs. IEEE-NANO, 1:17-20, June 2006.
    • (2006) IEEE-NANO , vol.1 , pp. 17-20
    • Hashempour, H.1    Lombardi, F.2
  • 7
    • 34547236228 scopus 로고    scopus 로고
    • Modeling and analysis of circuit performance of ballistic CNFET
    • San Francisco, CA, USA, 24-28 July
    • Bipul C. Paul, Shinobu Fujita, Masaki Okajima, and Thomas Lee. Modeling and analysis of circuit performance of ballistic CNFET. In 2006 Design Automation Conference, San Francisco, CA, USA, 24-28 July 2006.
    • (2006) 2006 Design Automation Conference
    • Paul, B.C.1    Fujita, S.2    Okajima, M.3    Lee, T.4
  • 8
    • 5444266124 scopus 로고    scopus 로고
    • A circuit-compatible model of ballistic carbon nanotube field-effect transistors
    • October
    • Arijit Raychowdhury, Saibal Mukhopadhyay, and Kaushik Roy. A circuit-compatible model of ballistic carbon nanotube field-effect transistors. Applied Physics Letters, 23(10):1411-20, October 2004.
    • (2004) Applied Physics Letters , vol.23 , Issue.10 , pp. 1411-1420
    • Raychowdhury, A.1    Mukhopadhyay, S.2    Roy, K.3
  • 9
    • 49849106531 scopus 로고    scopus 로고
    • Efficient circuit-level modelling of ballistic cnt using piecewise non-linear approximation of mobile charge density
    • Munich, Germany, 10-14 March
    • Tom J. Kazmierski, Dafeng Zhou, and Bashir M. Al-Hashimi. Efficient circuit-level modelling of ballistic cnt using piecewise non-linear approximation of mobile charge density. In IEEE Int. conf. on Design, Automation and Test in Europe (DATE), Munich, Germany, 10-14 March 2008.
    • (2008) IEEE Int. conf. on Design, Automation and Test in Europe (DATE)
    • Kazmierski, T.J.1    Zhou, D.2    Al-Hashimi, B.M.3
  • 10
    • 67650463394 scopus 로고    scopus 로고
    • Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, and Mark Lundstrom. Fettoy 2.0 - on line tool, 14 February 2006. https://www.nanohub.org/ resources/220/.
    • Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, and Mark Lundstrom. Fettoy 2.0 - on line tool, 14 February 2006. https://www.nanohub.org/ resources/220/.
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    • Ming-Hsun Yang, Kenneth B. K. Teo, Laurent Gangloff, William I. Milne, David G. Hasko, Yves Robert, and Pierre Legagneux. Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88(11):113507-1-3, March 2006.
    • Ming-Hsun Yang, Kenneth B. K. Teo, Laurent Gangloff, William I. Milne, David G. Hasko, Yves Robert, and Pierre Legagneux. Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88(11):113507-1-3, March 2006.
  • 14
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    • Calculation of densities from cubic equations of state
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    • Deiters, U.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.