Improved electrical properties of silicon-incorporated anodic niobium oxide formed on porous Nb-Si substrate

Applied Surface Science

Volumn 255, Issue 20, 2009, Pages 8383-8389

  Tauseef Tanvir, M ^a   Aoki, Y ^a   Habazaki, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Anodic oxide; Capacitance; Oblique angle deposition; Single phase Nb Si alloy

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANODIC OXIDATION; CAPACITANCE; DEPOSITION; ELECTROLYTES; METALLIC FILMS; NIOBIUM OXIDE; OXIDE FILMS; POROUS SILICON; SILICON ALLOYS; SILICON COMPOUNDS; SUBSTRATES; THERMODYNAMIC STABILITY;

ALUMINUM SUBSTRATE; AMMONIUM PENTABORATE ELECTROLYTE; ANODIC OXIDES; FORMATION VOLTAGE; LINEAR CORRELATION; NB-SI ALLOYS; OBLIQUE-ANGLE DEPOSITION; SILICON ADDITIONS;

NIOBIUM ALLOYS;

EID: 67650433675     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.05.094     Document Type: Article

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