Inhibition of field crystallization of anodic niobium oxide by incorporation of silicon species

Electrochimica Acta

Volumn 53, Issue 28, 2008, Pages 8203-8210

  Habazaki, H ^a   Ogasawara, T ^a   Fushimi, K ^a   Shimizu, K ^b   Nagata, S ^c   Izumi, T ^d   Skeldon, P ^e   Thompson, G E ^e  

^a HOKKAIDO UNIVERSITY   (Japan)

^b KEIO UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d Cabot Supermetals Co Ltd   (Japan)

^e UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Anodic oxide; Dielectric oxide; Field crystallization; Niobium; Silicon incorporation

Indexed keywords

CRYSTALLIZATION; ELECTRIC CURRENTS; NANOCRYSTALLINE ALLOYS; NIOBIUM; NIOBIUM COMPOUNDS; NONMETALS; SILICON; TRANSITION METALS;

ANODIC OXIDE; DIELECTRIC OXIDE; FIELD CRYSTALLIZATION; NIOBIUM OXIDES; SILICON INCORPORATION;

AMORPHOUS SILICON;

EID: 50649111638     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2008.06.032     Document Type: Article

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