Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2008, Pages 21-24

  Reid, Dave ^a   Millar, Campbell ^a   Roy, Gareth ^a   Roy, Scott ^a   Sinnott, Richard ^a   Stewart, Gordon ^a   Stewart, Graeme ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL EFFORT; DEVICE SIMULATORS; MOSFETS; N-CHANNEL; NANO CMOS; PHYSICAL PROCESS; RANDOM DOPANT INDUCED THRESHOLD VOLTAGE FLUCTUATION; THRESHOLD VOLTAGE FLUCTUATIONS;

THREE DIMENSIONAL; THRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICES;

EID: 67650345439     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648227     Document Type: Conference Paper

References (10)

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