On the combined impact of soft and medium gate oxide breakdown and process variability on the parametric figures of SRAM components

Records of the IEEE International Workshop on Memory Technology, Design and Testing

Volumn 2006, Issue , 2006, Pages 71-76

  Wang, Hua ^a,b   Miranda, Miguel ^a   Catthoor, Francky ^a,b   Dehaene, Wim ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIGITAL CIRCUITS; ELECTRIC BREAKDOWN; FAILURE ANALYSIS; GATES (TRANSISTOR); THRESHOLD VOLTAGE;

GATE OXIDE BREAKDOWN; PROCESS VARIABILITY; SENSE AMPLIFIERS; VERY DEEP SUBMICRON (VDSM);

STATIC RANDOM ACCESS STORAGE;

EID: 34047236872     PISSN: 10874852     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MTDT.2006.23     Document Type: Conference Paper

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