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Volumn 105, Issue 12, 2009, Pages

Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates

(9) Badcock, T J a Dawson, P a Kappers, M J b McAleese, C b Hollander, J L b Johnston, C F b Sridhara Rao, D V b Sanchez, A M b,c Humphreys, C J b

a UNIVERSITY OF MANCHESTER (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c UNIVERSITY OF CÁDIZ (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BAND EDGE; BIAXIAL COMPRESSIVE STRAIN; BLUE SHIFT; EXCITATION SPECTROSCOPY; EXCITON-BINDING ENERGY; GAN/ALGAN MULTIPLE QUANTUM WELLS; LOCALIZED EXCITON; LOW TEMPERATURES; LOWER ENERGIES; NON-POLAR; OPTICAL POLARIZATION; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; PHOTOLUMINESCENCE EXCITATION SPECTRUM; PHOTOLUMINESCENCE SPECTRUM; PLANE SAPPHIRE; POLARIZATION DEPENDENCE; POLARIZED LIGHT; QUANTUM WELL; SUB-BANDS; WELL WIDTH;

ANISOTROPY; BINDING ENERGY; CORUNDUM; EXCITONS; LIGHT POLARIZATION; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STACKING FAULTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 67650251608 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3156688 Document Type: Conference Paper

Times cited : (29)

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