메뉴 건너뛰기




Volumn 23, Issue 7, 2008, Pages

Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

COLOR; CORUNDUM; DIES; EPITAXIAL LAYERS; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT POLARIZATION; LIQUID CRYSTAL DISPLAYS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; POLARIZATION; SILICON CARBIDE; WIND;

EID: 47749136638     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/7/072001     Document Type: Article
Times cited : (13)

References (19)
  • 1
    • 17944381225 scopus 로고    scopus 로고
    • Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes
    • Gardner N F, Kim J C, Wierer J J, Shen Y C and Krames M R 2005 Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes Appl. Phys. Lett. 86 111101
    • (2005) Appl. Phys. Lett. , vol.86 , Issue.11 , pp. 111101
    • Gardner, N.F.1    Kim, J.C.2    Wierer, J.J.3    Shen, Y.C.4    Krames, M.R.5
  • 3
    • 37249053777 scopus 로고    scopus 로고
    • Characteristics of polarized electroluminescence from m-plane InGaN-based light emitting diodes
    • Tsujimura H, Nakagawa S, Okamoto K and Ohta H 2007 Characteristics of polarized electroluminescence from m-plane InGaN-based light emitting diodes Japan. J. Appl. Phys. 46 L1010
    • (2007) Japan. J. Appl. Phys. , vol.46 , Issue.NO. 42 , pp. 1010
    • Tsujimura, H.1    Nakagawa, S.2    Okamoto, K.3    Ohta, H.4
  • 4
    • 33845757205 scopus 로고    scopus 로고
    • Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on -plane GaN
    • Masui H, Baker T J, Iza M, Zhong H, Nakamura S and DenBaars S P 2006 Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on -plane GaN J. Appl. Phys. 100 113109
    • (2006) J. Appl. Phys. , vol.100 , Issue.11 , pp. 113109
    • Masui, H.1    Baker, T.J.2    Iza, M.3    Zhong, H.4    Nakamura, S.5    Denbaars, S.P.6
  • 6
    • 34548449882 scopus 로고    scopus 로고
    • Linearly polarized emission from GaInN light-emitting diodes with polarization-enhancing reflector
    • Schubert M F, Chhajed S, Kim J K, Schubert E F and Cho J 2007 Linearly polarized emission from GaInN light-emitting diodes with polarization-enhancing reflector Opt. Express 15 11213
    • (2007) Opt. Express , vol.15 , Issue.18 , pp. 11213
    • Schubert, M.F.1    Chhajed, S.2    Kim, J.K.3    Schubert, E.F.4    Cho, J.5
  • 7
    • 34547655643 scopus 로고    scopus 로고
    • Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates
    • Schubert M F, Chhajed S, Kim J K, Schubert E F and Cho J 2007 Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates Appl. Phys. Lett. 91 051117
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.5 , pp. 051117
    • Schubert, M.F.1    Chhajed, S.2    Kim, J.K.3    Schubert, E.F.4    Cho, J.5
  • 8
    • 34249741084 scopus 로고    scopus 로고
    • Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm
    • Jia C, Yu T, Mu S, Pan Y, Yang Z, Chen Z, Qin Z and Zhang G 2007 Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm Appl. Phys. Lett. 90 211112
    • (2007) Appl. Phys. Lett. , vol.90 , Issue.21 , pp. 211112
    • Jia, C.1    Yu, T.2    Mu, S.3    Pan, Y.4    Yang, Z.5    Chen, Z.6    Qin, Z.7    Zhang, G.8
  • 10
    • 0028423317 scopus 로고
    • 0.5P/GaP light-emitting diodes
    • 0.5P/GaP light-emitting diodes Appl. Phys. Lett. 64 2839
    • (1994) Appl. Phys. Lett. , vol.64 , Issue.21 , pp. 2839
    • Kish, F.A.1    Al, E.2
  • 12
    • 35548966648 scopus 로고    scopus 로고
    • Temperature dependence of polarized electroluminescence from nonpolar m-plane InGaN-based light emitting diodes
    • Nakagawa S, Tsujimura H, Okamoto K, Kubota M and Ohta H 2007 Temperature dependence of polarized electroluminescence from nonpolar m-plane InGaN-based light emitting diodes Appl. Phys. Lett. 91 171110
    • (2007) Appl. Phys. Lett. , vol.91 , Issue.17 , pp. 171110
    • Nakagawa, S.1    Tsujimura, H.2    Okamoto, K.3    Kubota, M.4    Ohta, H.5
  • 13
    • 0038646338 scopus 로고    scopus 로고
    • Polarization isotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells
    • Sun Y J, Brandt O, Ramsteiner M, Grahn H T and Ploog K H 2003 Polarization isotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells Appl. Phys. Lett. 82 3850
    • (2003) Appl. Phys. Lett. , vol.82 , Issue.22 , pp. 3850
    • Sun, Y.J.1    Brandt, O.2    Ramsteiner, M.3    Grahn, H.T.4    Ploog, K.H.5
  • 14
    • 0000033216 scopus 로고    scopus 로고
    • Valence subband structures of -GaN/AlGaN strained quantum wells calculated by the tight-binding method
    • Niwa A, Ohtoshi T and Kuroda T 1997 Valence subband structures of -GaN/AlGaN strained quantum wells calculated by the tight-binding method Appl. Phys. Lett. 70 2159
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.16 , pp. 2159
    • Niwa, A.1    Ohtoshi, T.2    Kuroda, T.3
  • 15
    • 0037084631 scopus 로고    scopus 로고
    • Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy
    • Ghosh S, Waltereit P, Brandt O, Grahn H T and Ploog K H 2002 Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy Phys. Rev. B 65 075202
    • (2002) Phys. Rev. , vol.65 , Issue.7 , pp. 075202
    • Ghosh, S.1    Waltereit, P.2    Brandt, O.3    Grahn, H.T.4    Ploog, K.H.5
  • 16
    • 40749157567 scopus 로고    scopus 로고
    • Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes
    • Masui H, Nakamura S and DenBaars S P 2008 Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes Appl. Opt. 47 88
    • (2008) Appl. Opt. , vol.47 , Issue.1 , pp. 88
    • Masui, H.1    Nakamura, S.2    Denbaars, S.P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.