Time-delayed transformation of defects in zinc oxide layers grown along the zinc-face using a hydrothermal technique

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Noor, Hadia ^a   Klason, P ^b   Nur, O ^c   Wahab, Q ^c   Asghar, M ^a   Willander, M ^b,c  

^a THE ISLAMIA UNIVERSITY OF BAHAWALPUR   (Pakistan)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP-LEVEL DEFECTS; DLTS; ELECTRON TRAP LEVELS; FAVORABLE CONDITIONS; FREE CARRIER CONCENTRATION; HYDROTHERMAL TECHNIQUES; HYDROTHERMALLY; MEASUREMENT CONDITIONS; OXIDE LAYER; SHALLOW DONORS; TRAP CONCENTRATION; X-RAY DIFFRACTION MEASUREMENTS; ZNO;

ACTIVATION ENERGY; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

ZINC;

EID: 67650229986     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3149800     Document Type: Conference Paper

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