Study of lattice properties of Ga1-x Mnx N epilayers grown by plasma-assisted molecular beam epitaxy by means of optical techniques

Journal of Crystal Growth

Volumn 296, Issue 2, 2006, Pages 174-178

  Asghar, M ^a   Hussain, I ^a   Bustarret, E ^b   Cibert, J ^c   Kuroda, S ^d   Marcet, S ^d   Mariette, H ^d  

^a THE ISLAMIA UNIVERSITY OF BAHAWALPUR   (Pakistan)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c LIN CNRS   (France)

^d CEA GRENOBLE   (France)

Author keywords

A1. Characterization; A1. Impurities; A1. Raman scattering; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Perovskites; B2. Semiconducting III V materials

Indexed keywords

EPITAXIAL GROWTH; IMPURITIES; MOLECULAR BEAM EPITAXY; PEROVSKITE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; X RAY DIFFRACTION;

EPILAYERS; RAMAN ACTIVE EXCITATIONS; SEMICONDUCTING III-V MATERIALS;

GALLIUM COMPOUNDS;

EID: 33750506687     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.032     Document Type: Article

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