Electrical characterization of magnesium implanted gallium nitride

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 178-182

  Krtschil, A ^a   Kielburg, A ^a   Witte, H ^a   Christen, J ^a   Krost, A ^a   Wenzel, A ^b   Rauschenbach, B ^c  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

^c UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP REGION; C AXIS ORIENTED; CARRIER EMISSION; DEFECT STATE; DONOR LEVELS; ELECTRICAL CHARACTERIZATION; IMPLANTATION-INDUCED DEFECTS; ION DOSE; MAGNESIUM IONS; NITROGEN VACANCIES; OPTICAL ADMITTANCE; PHOTON ENERGY; SAPPHIRE SUBSTRATES; SHALLOW STATE; TEMPERATURE-DEPENDENT CONDUCTIVITY; THERMAL ACTIVATION ENERGIES; TRANSITION ENERGY;

ACTIVATION ENERGY; DATA STORAGE EQUIPMENT; DEFECTS; GALLIUM NITRIDE; METAL IONS; MOLECULAR BEAM EPITAXY; SAPPHIRE; X RAY DIFFRACTION;

MAGNESIUM;

EID: 0036139565     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421218     Document Type: Article

References (21)

1. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000).
2. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
3. H. Riechert, R. Averbeck, A. Graber, M. Schienle, U. Strauß, and H. Tews, Mater. Res. Soc. Symp. Proc. 449, 1490 (1997).
4. A. Wenzel, H. Karl, C. Liu, and B. Rauschenbach, IEEE Proceedings of the International Conference on Ion Implantation Technology 2000 (2001), p. 99.
5. A. Wenzel, C. Liu, and B. Rauschenbach, Mater. Sci. Eng., B 59, 191 (1999).
6. A. Krtschil, H. Witte, M. Lisker, J. Christen, A. Krost, U. Birkle, S. Einfeldt, D. Hommel, A. Wenzel, and B. Rauschenbach, Phys. Status Solidi B 216, 587 (1999).
7. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors (Academic, London, 1992).
8. J. Barbolla, S. Duenas, and L. Bailon, Solid-State Electron. 35, 285 (1992).
9. A. Krtschil, A. Kielburg, H. Witte, A. Krost, J. Christen, A. Wenzel, and B. Rauschenbach, Proc. Int. Workshop Nitride Semicond. IPAP Conf. Series 1, 625 (2001).
10. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake, J. Appl. Phys. 76, 304 (1994).
11. Z. Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 72, 2277 (1998).
12. C. D. Wang, L. S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. E. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 72, 1211 (1998).
13. F. D. Auret, S. A. Goodman, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 73, 3745 (1998).
14. P. Hacke, H. Nakayama, T. Detchprohm, K. Hiramatsu, and N. Sawaki, Appl. Phys. Lett. 68, 1362 (1996).
15. A. Krtschil, A. Kielburg, H. Witte, A. Krost, J. Christen, A. Wenzel, and B. Rauschenbach, Phys. Status Solidi A 228 (1), 325 (2001).
16. C. V. Reddy, K. Balakrishnan, H. Okumura, and S. Yoshida, Appl. Phys. Lett. 73, 244 (1998).
17. A. Krtschil, H. Witte, M. Lisker, J. Christen, A. Krost, U. Birkle, S. Einfeldt, D. Hommel, F. Scholz, J. Off, and M. Stutzmann, Appl. Phys. Lett. 77, 546 (2000).
18. A. Krtschil, M. Lisker, H. Witte, J. Christen, U. Birkle, S. Einfeldt, and D. Hommel, Mater. Sci. Eng., B 59, 226 (1999).
19. G. Yi and B. W. Wessels, Appl. Phys. Lett. 68, 3769 (1996).
20. D. J. Chadi, Appl. Phys. Lett. 71, 2970 (1997).
21. D. C. Look, D. C. Reynolds, J. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molnar, Phys. Rev. Lett. 79, 2273 (1997).