Effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 3, Issue , 2004, Pages 2395-2398

  Cui, Can ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Yu, Xuegong ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Neutron irradiation; Oxygen precipitation; Silicon

Indexed keywords

ELECTRON IRRADIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NEUTRON IRRADIATION; OXYGEN; PRECIPITATION (CHEMICAL); SILICON;

ANNEALING TIME; NON-IRRADIATED WAFERS; OXYGEN PRECIPITATION; ROOM TEMPERATURE;

COMPLEXATION;

EID: 21644446936     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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