Oxygen precipitation in neutron-irradiated Czochralski silicon annealed at elevated temperature

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 13, 2005, Pages 2442-2447

  Cui, Can ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Fan, Ruixin ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELEVATED TEMPERATURE; OXYGEN PRECIPITATION; SUPERSATURATED VACANCIES;

ANNEALING; HIGH TEMPERATURE APPLICATIONS; NEUTRON IRRADIATION; OXYGEN; SEMICONDUCTING SILICON; SUPERSATURATION; THERMAL EFFECTS;

PRECIPITATION (CHEMICAL);

EID: 27744492152     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521141     Document Type: Article

References (23)

1. T. Y. Tan, E. E. Gardner, and W. K. Tice, Appl. Phys. Lett. 30, 175 (1977).
2. G. A. Rozgonyi and C. W. Pearce, Appl. Phys. Lett. 32, 747 (1978).
3. H. Tietze-Jaensch, D. Sieger, R. Geick, W. Zulehner, and A. de Geyer, Appl. Phys. A 54, 19 (1992).
4. C. Cui, D. Yang, X. Yu, X. Ma, L. Li, and D. Que, Semicond. Sci. Technol. 19, 548 (2004).
5. P. Liu, X. Ma, R. Fan, J. Zhang, L. Li, and D. Que, J. Appl. Phys. 87, 3669 (2000).
6. X. Ma, X. Yu, R. Fan, and D. Yang, Appl. Phys. Lett. 81, 496 (2002).
7. J. Vanhellemont and C. Claeys, J. Appl. Phys. 62, 3960 (1987).
8. J. Vanhellemont and C. Claeys, J. Appl. Phys. 71, 1073 (1990).
9. V. V. Voronkov, J. Cryst. Growth 59, 625 (1982).
10. R. Falster, V. V. Vorokov, and F. Quast, phys. stat. sol. (b) 222, 219 (2000).
11. G. Bemski, J. Appl. Phys. 30, 1195 (1959).
12. G. D. Watkins, J. W. Corbett, and R. M. Walker, J. Appl. Phys. 30, 1198 (1959).
13. G. D. Watkins and J. W. Gorbett, Phys. Rev. 134, 59 (1964).
14. M. Nisenoff and H. Y. Fan, Phys. Rev. 128, 1605 (1962).
15. H. J. Ruitz and G. P. Polack, J. Electrochem. Soc. 125, 128 (1978).
16. S. M. Hu, Appl. Phys. Lett. 31, 53 (1977).
17. W. Kaiser, H. L. Frisch, and H. Reiss, Phys. Rev. 112, 1546 (1958).
18. C. A. Londos, M. J. Binns, A. R. Brown, S. AmcQuaid, and R. C. Newman, Appl. Phys. Lett. 62, 1525 (1993).
19. A. S. Oates and R. C. Newman, Appl. Phys. Lett. 49(5), 262 (1986).
20. V. V. Voronkov and R. Falster, J. Electrochem. Soc. 149(3), 167 (2002).
21. V. V. Voronkov and R. Falster, J. Cryst. Growth 204, 462 (1999).
22. X. Ma, L. Lin, D. Tian, L. Fu, and D. Yang, J. Phys.: Condens. Matter 16, 3563 (2004).
23. Y. Xu, Y. Li, C. Liu, and H. Wang, Appl. Phys. Lett. 65(22), 2807 (1994).