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Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 24, 2009, Pages

Relative stability of extended interstitial defects in silicon: First-principles calculations

(2) Park, Hyoungki a Wilkins, John W a

a OHIO STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67650113156 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.79.241203 Document Type: Article

Times cited : (10)

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- energy per interstitial of /IIO/ is lower than /IIIO/ by 0.02 eV in the table, which is in agreement with our results (see supplement).tion energy per interstitial of /IIO/ is lower than /IIIO/ by 0.02 eV in the table, which is in agreement with our results (see supplement). There is an inconsistency between results in the table and the conclusion in the text of this reference regarding the lowest-energy

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- A highly optimized modified embedded atom method potential is used. Results of MD simulations will be discussed in a separate publication.

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