From compact point defects to extended structures in silicon

European Physical Journal B

Volumn 57, Issue 3, 2007, Pages 229-234

  Du, Y A ^a   Hennig, R G ^b,c   Lenosky, T J ^d   Wilkins, J W ^c  

^a WAKE FOREST UNIVERSITY   (United States)

^b Cornell University   (United States)

^c OHIO STATE UNIVERSITY   (United States)

^d Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT POINT DEFECTS; EXOTHERMIC CAPTURE; MICROSECONDS; SILICON INTERSTITIAL CLUSTERS;

GROUND STATE; GROWTH (MATERIALS);

SILICON COMPOUNDS;

EID: 34547430531     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2007-00176-5     Document Type: Article

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