Silicon light emissions from boron implant-induced defect engineering

Journal of Non-Crystalline Solids

Volumn 352, Issue 23-25, 2006, Pages 2506-2509

  Pan, G Z ^a   Ostroumov, R P ^a   Ren, L P ^b   Lian, Y G ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Global Nanosystems Inc   (United States)

Author keywords

Defects; Electroluminescence; Microscopy; Silicon; TEM STEM

Indexed keywords

ANNEALING; DEFECTS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING CONDITIONS; DISLOCATION; P-N JUNCTION; PEAK INTENSITY;

LIGHT EMISSION;

EID: 33745356219     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.02.083     Document Type: Article

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