Role of etching in aqueous oxidation of hydrogen-terminated Si(100)

Journal of Physical Chemistry C

Volumn 113, Issue 23, 2009, Pages 10206-10214

  Kulkarni, Margaret ^a,b   Green, Sara K ^a,c   Shea, Caitlyn ^a,d   Queeney, K T ^a  

^a SMITH COLLEGE   (United States)

^b Columbia University ^*  (United States)

^c USEPA Region 1   (United States)

^d University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS OXIDATION; ETCHING PROCESS; FREE WATER; INITIAL PHASIS; ISOTOPIC LABELING; OXIDATION OF HYDROGEN; OXIDE GROWTH; SI(1 0 0); SOLUTION PH; SURFACE ETCHING; SURFACE INFRARED SPECTROSCOPY; SURFACE OXIDATIONS; ULTRA-PURE WATER; VIBRATIONAL MODES;

DISSOLUTION; DISSOLVED OXYGEN; HYDROGEN; INFRARED SPECTROSCOPY; OXIDATION; SILICON; SPECTROSCOPIC ANALYSIS;

ETCHING;

EID: 67649986558     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp8114989     Document Type: Article

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