Understanding the pH dependence of silicon etching: The importance of dissolved oxygen in buffered HF etchants

Surface Science

Volumn 541, Issue 1-3, 2003, Pages 252-261

  Garcia, Simon P ^a   Bao, Hailing ^a   Hines, Melissa A ^a  

^a Department of Molecular Biology and Genetics   (United States)

Author keywords

Etching; Infrared absorption spectroscopy; Monte Carlo simulations; Oxidation; Oxygen; Scanning tunneling microscopy; Silicon; Surface chemical reaction

Indexed keywords

OXIDATION; PH; SCANNING TUNNELING MICROSCOPY; SURFACE REACTIONS;

ETCHANTS;

ETCHING;

EID: 0042021711     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00952-X     Document Type: Article

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