Scanning tunneling microscopy study of hydrogen-terminated Si(001) surfaces after wet cleaning

Surface Science

Volumn 446, Issue 1-2, 2000, Pages 128-136

  Arima, K ^a   Endo, K ^a   Kataoka, T ^a   Oshikane, Y ^a   Inoue, H ^a   Mori, Y ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDRIDES; HYDROGEN; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE CLEANING; SURFACE STRUCTURE;

HYDROGEN TERMINATED SILICON SURFACE; WET CLEANING;

SEMICONDUCTING SILICON;

EID: 0034140677     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)01128-0     Document Type: Article

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