-
1
-
-
0032492884
-
Room-temperature transistor based on a single carbon nanotube
-
DOI 10.1038/29954
-
S. J. Tans, A. Verschueren, and C. Dekker, "Room-temperature Transistor Based on a Single Carbon Nanotube," Nature, vol.393, no. 6680, pp. 49-52, May 1998. (Pubitemid 28240249)
-
(1998)
Nature
, vol.393
, Issue.6680
, pp. 49-52
-
-
Tans, S.J.1
Verschueren, A.R.M.2
Dekker, C.3
-
2
-
-
0035793378
-
Functional nanoscale electronic devices assembled using silicon nanowire building blocks
-
DOI 10.1126/science.291.5505.851
-
Y. Cui and C. M. Liber, "Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks," Science, vol.291, no. 5505, pp. 851-853, Feb. 2001. (Pubitemid 32120751)
-
(2001)
Science
, vol.291
, Issue.5505
, pp. 851-853
-
-
Cui, Y.1
Lieber, C.M.2
-
3
-
-
33646254853
-
Vertical high-mobility wrap-gated inas nanowire transistor
-
May
-
T. Bryllert, L.-E. Wernersson, L. E. Fröberg, and L. Samuelson, "Vertical High-Mobility Wrap-Gated InAs Nanowire Transistor", IEEE Electron Device Letters, vol.27, No. 5, pp. 323-325, May 2006.
-
(2006)
IEEE Electron Device Letters
, vol.27
, Issue.5
, pp. 323-325
-
-
Bryllert, T.1
Wernersson, L.-E.2
Fröberg, L.E.3
Samuelson, L.4
-
4
-
-
17044363770
-
ZnO nanowire field-effect transistor and oxygen sensing property
-
DOI 10.1063/1.1836870
-
Z. Y. Fan, D. W. Wang, P. C. Chang, W. Y. Tseng, and J. G. Lu, "ZnO Nanowire Field-Effect Transistor and Oxygen Sensing Property," Appl. Phys. Lett., vol.85, no. 24, pp. 5923-5925, Dec. 2004. (Pubitemid 40817941)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.24
, pp. 5923-5925
-
-
Fan, Z.1
Wang, D.2
Chang, P.-C.3
Tseng, W.-Y.4
Lu, J.G.5
-
5
-
-
33744737932
-
Field-effect transistor based on â-SiC nanowire
-
DOI 10.1109/LED.2006.874219
-
W. M. Zhou, F. Fang, Z. Y. Hou, L. J. Yan, and Y. F. Zhang, "Field- Effect Transistor Based on â-SiC Nanowire", IEEE Electron Device Letters, vol.27, no. 6, pp. 463 - 465, June 2006. (Pubitemid 43821739)
-
(2006)
IEEE Electron Device Letters
, vol.27
, Issue.6
, pp. 463-465
-
-
Zhou, W.M.1
Fang, F.2
Hou, Z.Y.3
Yan, L.J.4
Zhang, Y.F.5
-
6
-
-
0035804248
-
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
-
DOI 10.1038/35051047
-
X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, "Indium Phosphide Nanowires as Building Blocks for Nanoscale Electronic and Optoelectronic Devices", Nature, vol.409, pp. 66-69, Jan. 2001. (Pubitemid 32098623)
-
(2001)
Nature
, vol.409
, Issue.6816
, pp. 66-69
-
-
Duan, X.1
Huang, Y.2
Cui, Y.3
Wang, J.4
Lieber, C.M.5
-
7
-
-
33646737027
-
High-yield GaN nanowire synthesis and field-effect transistor fabrication
-
Group III Nitrides, SiC, and ZnO
-
H. Wu, H.-Y. Cha, M. Chandrashekhar, M. G. Spencer, and G. Koley, "High-Yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication", Journal of Electronic Materials, vol.35, no. 4, pp. 670- 674, Apr. 2006. (Pubitemid 43745611)
-
(2006)
Journal of Electronic Materials
, vol.35
, Issue.4
, pp. 670-674
-
-
Wu, H.1
Cha, H.-Y.2
Chandrashekhar, M.3
Spencer, M.G.4
Koley, G.5
-
8
-
-
1442330252
-
Single-Crystal Nanorings Formed by Epitaxial Self-Coiling of Polar Nanobelts
-
DOI 10.1126/science.1092356
-
X. Y. Kong, Y. Ding, R. S. Yang, and Z. L. Wang, "Single-Crystal Nanorings Formed by Epitaxial Self-Coiling of Polar-Nanobelts", Science, vol.303, pp. 1348-1351, Feb. 2004. (Pubitemid 38269423)
-
(2004)
Science
, vol.303
, Issue.5662
, pp. 1348-1351
-
-
Kong, X.Y.1
Ding, Y.2
Yang, R.3
Wang, Z.L.4
-
9
-
-
20644460134
-
Optical properties of InN - The bandgap question
-
DOI 10.1016/j.spmi.2005.04.006, PII S0749603605000558
-
B. Monemar, P. P. Paskov and A. Kasic, "Optical Properties of InN- the Bandgap Question", Superlattices and Microstructures, vol.38, issue 1, pp. 38-56, July 2005. (Pubitemid 40834103)
-
(2005)
Superlattices and Microstructures
, vol.38
, Issue.1
, pp. 38-56
-
-
Monemar, B.1
Paskov, P.P.2
Kasic, A.3
-
10
-
-
0032181962
-
Growth and applications of group III-nitrides
-
PII S002237279868952X
-
O. Ambacher, "Growth and applications of Group III-nitrides", J. Phys. D: Appl. Phys., vol.31, pp. 2653-2710, Jun. 1998. (Pubitemid 128573945)
-
(1998)
Journal of Physics D: Applied Physics
, vol.31
, Issue.20
, pp. 2653-2710
-
-
Ambacher, O.1
-
11
-
-
33747886199
-
Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications
-
DOI 10.1093/ietele/e89-c.7.1037
-
O. Yilmazoglu, K. Mutamba, D. Pavlidis, and M. R. Mbarga, "Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications", IEICE Trans. Electron., vol.E89-C, no. 7, pp. 1037- 1041, July 2006. (Pubitemid 44290515)
-
(2006)
IEICE Transactions on Electronics
, vol.E89-C
, Issue.7
, pp. 1037-1041
-
-
Yilmazoglu, O.1
Mutamba, K.2
Pavlidis, D.3
Mbarga, M.R.4
-
12
-
-
0041878853
-
Third generation solar cells
-
Aug.
-
R. Szweda, "Third Generation Solar Cells", III-Vs Review, vol.16, issue 6, pp. 53-55, Aug. 2003.
-
(2003)
III-Vs Review
, vol.16
, Issue.6
, pp. 53-55
-
-
Szweda, R.1
-
13
-
-
33748955797
-
Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy
-
DOI 10.1063/1.2349314
-
D. G. Cooke, F. A. Hegmann, E. C. Young, and T. Tiedje, "Electron Mobility in Dilute GaAs Bismide and Nitride Alloys Measured by Time-Resolved Terahertz Spectroscopy", Appl. Phys. Lett., vol.89, p. 122103 Sept. 2006. (Pubitemid 44439787)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.12
, pp. 122103
-
-
Cooke, D.G.1
Hegmann, F.A.2
Young, E.C.3
Tiedje, T.4
-
14
-
-
33748594961
-
Nanowires photonics
-
Oct.
-
P. J. Pauzauskie and P. Yang, "Nanowires Photonics", Materials Today, vol.9, no. 10, pp. 36-45, Oct. 2006.
-
(2006)
Materials Today
, vol.9
, Issue.10
, pp. 36-45
-
-
Pauzauskie, P.J.1
Yang, P.2
-
15
-
-
0034313047
-
Optoelectronic devices based on iii-v compound semiconductors which have made a major scientific and technological impact in the past 20 years
-
Nov./Dec.
-
M. Razeghi, "Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made a Major Scientific and Technological Impact in the Past 20 Years", IEEE Journal on Selected Topics in Quantum Electronics, vol.6, no. 6, Nov./Dec. 2000.
-
(2000)
IEEE Journal on Selected Topics in Quantum Electronics
, vol.6
, Issue.6
-
-
Razeghi, M.1
-
16
-
-
0036227003
-
Vapor-solid growth route to single-crystalline indium nitride nanowires
-
Feb.
-
J. Zhang, L. Zhang, X. Peng and X. Wang, "Vapor-Solid Growth Route to Single-Crystalline Indium Nitride Nanowires", J. Mater. Chem., vol.12, pp. 802-804, Feb. 2002.
-
(2002)
J. Mater. Chem.
, vol.12
, pp. 802-804
-
-
Zhang, J.1
Zhang, L.2
Peng, X.3
Wang, X.4
-
17
-
-
12844252595
-
Growth and morphology of 0.80 eV photoemitting indium nitride nanowires
-
DOI 10.1063/1.1831563
-
M. C. Johnson, C. J. Lee, E. D. Bourret-Courchesne S. L. Konsek, S. Aloni, W. Q. Han, and A. Zettl, "Growth and Morphology of 0. 80 eV Photoemitting Indium Nitride Nanowires", Appl. Phys. Lett., vol.85, no23, pp. 5670-5672, Oct. 2004. (Pubitemid 40162558)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.23
, pp. 5670-5672
-
-
Johnson, M.C.1
Lee, C.J.2
Bourret-Courchesne, E.D.3
Konsek, S.L.4
Aloni, S.5
Han, W.Q.6
Zettl, A.7
-
18
-
-
24644432626
-
Transport Properties of InN Nanowires
-
Aug.
-
C. Y. Chang, G. C. Chi, W. M. Wang, L. C. Chen, K. H. Chen, F. Ren, and S. J. Pearton, "Transport Properties of InN Nanowires", Appl. Phys. Lett., vol.87, p. 093112, Aug. 2000.
-
(2000)
Appl. Phys. Lett.
, vol.87
, pp. 093112
-
-
Chang, C.Y.1
Chi, G.C.2
Wang, W.M.3
Chen, L.C.4
Chen, K.H.5
Ren, F.6
Pearton, S.J.7
-
19
-
-
29144473725
-
Electronic properties of InN nanowires
-
Dec.
-
G. Cheng, E. Stern, D. Turner-Evans and M. A. Reed, "Electronic Properties of InN Nanowires", Appl. Phys. Lett., vol.87, p. 253103, Dec. 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 253103
-
-
Cheng, G.1
Stern, E.2
Turner-Evans, D.3
Reed, M.A.4
-
20
-
-
42249102611
-
Synthesis and properties of high-quality inn nanowires and nanonetworks
-
Special issue paper; DOI: 10.1007/s11664-007-0353-8
-
Z. Cai, S. Garzon, MVS Chandrasekhar, R. A. Webb, and G. Koley, "Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks", J. Elec. Mater., Special issue paper; DOI: 10.1007/s11664-007-0353-8
-
J. Elec. Mater.
-
-
Cai, Z.1
Garzon, S.2
Chandrasekhar, M.V.S.3
Webb, R.A.4
Koley, G.5
-
21
-
-
0000823384
-
Gallium Nitride Nanowire Nanodevices
-
DOI 10.1021/nl015667d
-
Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, "Gallium Nitride Nanowire Nanodevices" Nano Lett., vol.2, no. 2, pp. 101-104, Jan. 2002. (Pubitemid 135706272)
-
(2002)
Nano Letters
, vol.2
, Issue.2
, pp. 101-104
-
-
Huang, Y.1
Duan, X.2
Cui, Y.3
Lieber, C.M.4
-
22
-
-
34948867371
-
Gate coupling and charge distribution in nanowire field effect transistors
-
DOI 10.1021/nl071330l
-
D. R. Khanal, and J. Wu, "Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors", Nano Lett., vol.7, no. 9, pp. 2778-2783, Aug. 2007. (Pubitemid 47522438)
-
(2007)
Nano Letters
, vol.7
, Issue.9
, pp. 2778-2783
-
-
Khanal, D.R.1
Wu, J.2
-
23
-
-
0347320483
-
Synthesis, Electronic Properties, and Applications of Indium Oxide Nanowires
-
DOI 10.1196/annals.1292.007
-
C. Li, D. Zhang, S. Han, X. Liu, T. Tang, B. Lei, Z. Liu, and C. Zhou, "Synthesis, Electronic Properties and Applications of Indium Oxide Nanowires", Annals of New York Academy of Sciences vol. 1006, pp. 104 - 121, 2003. (Pubitemid 38064779)
-
(2003)
Annals of the New York Academy of Sciences
, vol.1006
, pp. 104-121
-
-
Li, C.1
Zhang, D.2
Han, S.3
Liu, X.4
Tang, T.5
Lei, B.6
Liu, Z.7
Zhou, C.8
-
24
-
-
17044363770
-
ZnO nanowire field-effect transistor and oxygen sensing property
-
DOI 10.1063/1.1836870
-
Z. Fan, D. Wang, P.-C. Chang, W.-Y. Tseng, and J. G. Lu, "ZnO Nanowire Field-Effect Transistor and Oxygen Sensing Property", Appl. Phys. Lett., vol.85, no. 24, pp. 5923-5925, Dec. 2004. (Pubitemid 40817941)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.24
, pp. 5923-5925
-
-
Fan, Z.1
Wang, D.2
Chang, P.-C.3
Tseng, W.-Y.4
Lu, J.G.5
-
25
-
-
34547439783
-
Effect of surface oxidation on electron transport in InN thin films
-
DOI 10.1063/1.2747592
-
V. Lebedev, Ch. Y. Wang, V. Cimalla, S. Hauguth, T. Kups, M. Ali, G. Ecke, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, V. M. Polyakov, and F. Schwierz, "Effect of Surface Oxidation on Electron Transport in InN Thin Films", J. Appl. Phys., vol.101, p. 123705, Jun. 2007. (Pubitemid 46609850) (Pubitemid 47158124)
-
(2007)
Journal of Applied Physics
, vol.101
, Issue.12
, pp. 123705
-
-
Lebedev, V.1
Wang, Ch.Y.2
Cimalla, V.3
Hauguth, S.4
Kups, T.5
Ali, M.6
Ecke, G.7
Himmerlich, M.8
Krischok, S.9
Schaefer, J.A.10
Ambacher, O.11
Polyakov, V.M.12
Schwierz, F.13
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