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Volumn , Issue , 2008, Pages 118-121

InN nanowire based sensors

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; CURRENT MODULATION; HIGH QUALITY; HIGH SENSITIVITY; INN NANOWIRES; IV CHARACTERISTICS; NANO-NETWORKS; NANOSCALE CATALYSTS; SHELL LAYERS; SINGLE NW; VAPOR-LIQUID-SOLID MECHANISM;

EID: 67649922191     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2008.4716397     Document Type: Conference Paper
Times cited : (4)

References (25)
  • 1
    • 0032492884 scopus 로고    scopus 로고
    • Room-temperature transistor based on a single carbon nanotube
    • DOI 10.1038/29954
    • S. J. Tans, A. Verschueren, and C. Dekker, "Room-temperature Transistor Based on a Single Carbon Nanotube," Nature, vol.393, no. 6680, pp. 49-52, May 1998. (Pubitemid 28240249)
    • (1998) Nature , vol.393 , Issue.6680 , pp. 49-52
    • Tans, S.J.1    Verschueren, A.R.M.2    Dekker, C.3
  • 2
    • 0035793378 scopus 로고    scopus 로고
    • Functional nanoscale electronic devices assembled using silicon nanowire building blocks
    • DOI 10.1126/science.291.5505.851
    • Y. Cui and C. M. Liber, "Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks," Science, vol.291, no. 5505, pp. 851-853, Feb. 2001. (Pubitemid 32120751)
    • (2001) Science , vol.291 , Issue.5505 , pp. 851-853
    • Cui, Y.1    Lieber, C.M.2
  • 4
    • 17044363770 scopus 로고    scopus 로고
    • ZnO nanowire field-effect transistor and oxygen sensing property
    • DOI 10.1063/1.1836870
    • Z. Y. Fan, D. W. Wang, P. C. Chang, W. Y. Tseng, and J. G. Lu, "ZnO Nanowire Field-Effect Transistor and Oxygen Sensing Property," Appl. Phys. Lett., vol.85, no. 24, pp. 5923-5925, Dec. 2004. (Pubitemid 40817941)
    • (2004) Applied Physics Letters , vol.85 , Issue.24 , pp. 5923-5925
    • Fan, Z.1    Wang, D.2    Chang, P.-C.3    Tseng, W.-Y.4    Lu, J.G.5
  • 5
    • 33744737932 scopus 로고    scopus 로고
    • Field-effect transistor based on â-SiC nanowire
    • DOI 10.1109/LED.2006.874219
    • W. M. Zhou, F. Fang, Z. Y. Hou, L. J. Yan, and Y. F. Zhang, "Field- Effect Transistor Based on â-SiC Nanowire", IEEE Electron Device Letters, vol.27, no. 6, pp. 463 - 465, June 2006. (Pubitemid 43821739)
    • (2006) IEEE Electron Device Letters , vol.27 , Issue.6 , pp. 463-465
    • Zhou, W.M.1    Fang, F.2    Hou, Z.Y.3    Yan, L.J.4    Zhang, Y.F.5
  • 6
    • 0035804248 scopus 로고    scopus 로고
    • Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    • DOI 10.1038/35051047
    • X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, "Indium Phosphide Nanowires as Building Blocks for Nanoscale Electronic and Optoelectronic Devices", Nature, vol.409, pp. 66-69, Jan. 2001. (Pubitemid 32098623)
    • (2001) Nature , vol.409 , Issue.6816 , pp. 66-69
    • Duan, X.1    Huang, Y.2    Cui, Y.3    Wang, J.4    Lieber, C.M.5
  • 7
    • 33646737027 scopus 로고    scopus 로고
    • High-yield GaN nanowire synthesis and field-effect transistor fabrication
    • Group III Nitrides, SiC, and ZnO
    • H. Wu, H.-Y. Cha, M. Chandrashekhar, M. G. Spencer, and G. Koley, "High-Yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication", Journal of Electronic Materials, vol.35, no. 4, pp. 670- 674, Apr. 2006. (Pubitemid 43745611)
    • (2006) Journal of Electronic Materials , vol.35 , Issue.4 , pp. 670-674
    • Wu, H.1    Cha, H.-Y.2    Chandrashekhar, M.3    Spencer, M.G.4    Koley, G.5
  • 8
    • 1442330252 scopus 로고    scopus 로고
    • Single-Crystal Nanorings Formed by Epitaxial Self-Coiling of Polar Nanobelts
    • DOI 10.1126/science.1092356
    • X. Y. Kong, Y. Ding, R. S. Yang, and Z. L. Wang, "Single-Crystal Nanorings Formed by Epitaxial Self-Coiling of Polar-Nanobelts", Science, vol.303, pp. 1348-1351, Feb. 2004. (Pubitemid 38269423)
    • (2004) Science , vol.303 , Issue.5662 , pp. 1348-1351
    • Kong, X.Y.1    Ding, Y.2    Yang, R.3    Wang, Z.L.4
  • 9
    • 20644460134 scopus 로고    scopus 로고
    • Optical properties of InN - The bandgap question
    • DOI 10.1016/j.spmi.2005.04.006, PII S0749603605000558
    • B. Monemar, P. P. Paskov and A. Kasic, "Optical Properties of InN- the Bandgap Question", Superlattices and Microstructures, vol.38, issue 1, pp. 38-56, July 2005. (Pubitemid 40834103)
    • (2005) Superlattices and Microstructures , vol.38 , Issue.1 , pp. 38-56
    • Monemar, B.1    Paskov, P.P.2    Kasic, A.3
  • 10
    • 0032181962 scopus 로고    scopus 로고
    • Growth and applications of group III-nitrides
    • PII S002237279868952X
    • O. Ambacher, "Growth and applications of Group III-nitrides", J. Phys. D: Appl. Phys., vol.31, pp. 2653-2710, Jun. 1998. (Pubitemid 128573945)
    • (1998) Journal of Physics D: Applied Physics , vol.31 , Issue.20 , pp. 2653-2710
    • Ambacher, O.1
  • 11
    • 33747886199 scopus 로고    scopus 로고
    • Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications
    • DOI 10.1093/ietele/e89-c.7.1037
    • O. Yilmazoglu, K. Mutamba, D. Pavlidis, and M. R. Mbarga, "Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications", IEICE Trans. Electron., vol.E89-C, no. 7, pp. 1037- 1041, July 2006. (Pubitemid 44290515)
    • (2006) IEICE Transactions on Electronics , vol.E89-C , Issue.7 , pp. 1037-1041
    • Yilmazoglu, O.1    Mutamba, K.2    Pavlidis, D.3    Mbarga, M.R.4
  • 12
    • 0041878853 scopus 로고    scopus 로고
    • Third generation solar cells
    • Aug.
    • R. Szweda, "Third Generation Solar Cells", III-Vs Review, vol.16, issue 6, pp. 53-55, Aug. 2003.
    • (2003) III-Vs Review , vol.16 , Issue.6 , pp. 53-55
    • Szweda, R.1
  • 13
    • 33748955797 scopus 로고    scopus 로고
    • Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy
    • DOI 10.1063/1.2349314
    • D. G. Cooke, F. A. Hegmann, E. C. Young, and T. Tiedje, "Electron Mobility in Dilute GaAs Bismide and Nitride Alloys Measured by Time-Resolved Terahertz Spectroscopy", Appl. Phys. Lett., vol.89, p. 122103 Sept. 2006. (Pubitemid 44439787)
    • (2006) Applied Physics Letters , vol.89 , Issue.12 , pp. 122103
    • Cooke, D.G.1    Hegmann, F.A.2    Young, E.C.3    Tiedje, T.4
  • 14
    • 33748594961 scopus 로고    scopus 로고
    • Nanowires photonics
    • Oct.
    • P. J. Pauzauskie and P. Yang, "Nanowires Photonics", Materials Today, vol.9, no. 10, pp. 36-45, Oct. 2006.
    • (2006) Materials Today , vol.9 , Issue.10 , pp. 36-45
    • Pauzauskie, P.J.1    Yang, P.2
  • 15
    • 0034313047 scopus 로고    scopus 로고
    • Optoelectronic devices based on iii-v compound semiconductors which have made a major scientific and technological impact in the past 20 years
    • Nov./Dec.
    • M. Razeghi, "Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made a Major Scientific and Technological Impact in the Past 20 Years", IEEE Journal on Selected Topics in Quantum Electronics, vol.6, no. 6, Nov./Dec. 2000.
    • (2000) IEEE Journal on Selected Topics in Quantum Electronics , vol.6 , Issue.6
    • Razeghi, M.1
  • 16
    • 0036227003 scopus 로고    scopus 로고
    • Vapor-solid growth route to single-crystalline indium nitride nanowires
    • Feb.
    • J. Zhang, L. Zhang, X. Peng and X. Wang, "Vapor-Solid Growth Route to Single-Crystalline Indium Nitride Nanowires", J. Mater. Chem., vol.12, pp. 802-804, Feb. 2002.
    • (2002) J. Mater. Chem. , vol.12 , pp. 802-804
    • Zhang, J.1    Zhang, L.2    Peng, X.3    Wang, X.4
  • 20
    • 42249102611 scopus 로고    scopus 로고
    • Synthesis and properties of high-quality inn nanowires and nanonetworks
    • Special issue paper; DOI: 10.1007/s11664-007-0353-8
    • Z. Cai, S. Garzon, MVS Chandrasekhar, R. A. Webb, and G. Koley, "Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks", J. Elec. Mater., Special issue paper; DOI: 10.1007/s11664-007-0353-8
    • J. Elec. Mater.
    • Cai, Z.1    Garzon, S.2    Chandrasekhar, M.V.S.3    Webb, R.A.4    Koley, G.5
  • 21
    • 0000823384 scopus 로고    scopus 로고
    • Gallium Nitride Nanowire Nanodevices
    • DOI 10.1021/nl015667d
    • Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, "Gallium Nitride Nanowire Nanodevices" Nano Lett., vol.2, no. 2, pp. 101-104, Jan. 2002. (Pubitemid 135706272)
    • (2002) Nano Letters , vol.2 , Issue.2 , pp. 101-104
    • Huang, Y.1    Duan, X.2    Cui, Y.3    Lieber, C.M.4
  • 22
    • 34948867371 scopus 로고    scopus 로고
    • Gate coupling and charge distribution in nanowire field effect transistors
    • DOI 10.1021/nl071330l
    • D. R. Khanal, and J. Wu, "Gate Coupling and Charge Distribution in Nanowire Field Effect Transistors", Nano Lett., vol.7, no. 9, pp. 2778-2783, Aug. 2007. (Pubitemid 47522438)
    • (2007) Nano Letters , vol.7 , Issue.9 , pp. 2778-2783
    • Khanal, D.R.1    Wu, J.2
  • 24
    • 17044363770 scopus 로고    scopus 로고
    • ZnO nanowire field-effect transistor and oxygen sensing property
    • DOI 10.1063/1.1836870
    • Z. Fan, D. Wang, P.-C. Chang, W.-Y. Tseng, and J. G. Lu, "ZnO Nanowire Field-Effect Transistor and Oxygen Sensing Property", Appl. Phys. Lett., vol.85, no. 24, pp. 5923-5925, Dec. 2004. (Pubitemid 40817941)
    • (2004) Applied Physics Letters , vol.85 , Issue.24 , pp. 5923-5925
    • Fan, Z.1    Wang, D.2    Chang, P.-C.3    Tseng, W.-Y.4    Lu, J.G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.