Comparative study of n-type AlGaN grown on sapphire by using a superlattice layer and a low-temperature AlN interlayer

Journal of Crystal Growth

Volumn 299, Issue 1, 2007, Pages 59-62

  Xi, Y A ^a,b   Chen, K X ^a,b   Mont, F ^a   Kim, J K ^a   Schubert, E F ^a,b   Liu, W ^c   Li, X ^c   Smart, J A ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

^c Crystal IS Inc   (United States)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. AlGaN; B1. Nitride; B3. Light emitting diode

Indexed keywords

ATOMIC FORCE MICROSCOPY; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; SAPPHIRE; SEMICONDUCTOR GROWTH; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

DOPING CONCENTRATION; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD); SECONDARY ION MASS SPECTROMETRY (SIMS);

ALUMINUM COMPOUNDS;

EID: 33846582000     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.253     Document Type: Article

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