Temperature-dependent photoluminescence of ZnO layers grown on 6H-SIC substrates

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 7738-7741

  Ashrafi, A B M A ^a   Binh, N T ^a   Zhang, B P ^a   Segawa, Y ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUENCHING; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS;

FREE EXCITION (FX) EMISSION; LATTICE MISMATCH; ROOM TEMPERATURE (RT); TEMPERATURE DEPENDENCE;

ZINC OXIDE;

EID: 3142601597     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1649451     Document Type: Article

References (19)

1. T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, R. Shiroki, K. Tamura, T. Yasuda, and H. Koinuma, Appl. Phys. Lett. 78, 1237 (2001).
2. F. M. Phelps III, M.I.T. Wavelength Tables (MIT Press, Cambridge, 1982), Vol. 2.
3. H. D. Shun, T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, J. Appl. Phys. 91, 1993 (2002).
4. M. Zamfirescu, A. Kavokin, B. Oil, G. Malpuech, and M. Kaliteevski, Phys. Rev. B 65, 16205 (2002).
5. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997).
6. M. Miyamura, K. Tachibana, and Y. Arakawa, Phys. Status Solidi A 192, 33 (2002).
7. A. B. M. A. Ashrafi, B. P. Zhnag, N. T. Binh, T. Wakatsuki, and Y. Segawa, Jpn. J. Appl. Phys., Part 1 43, 1114 (2004).
8. B. P. Zhang, K. Wakatsuki, N. T. Binh, N. Usami, and Y. Segawa, Thin Solid Films 449, 12 (2004).
9. P. Fons, K. Iwata, A. Yamada, K. Matsubara, and S. Niki, Appl. Phys. Lett. 77, 1801 (2000).
10. D. W. Hamby, D. A. Lucca, M. J. Klopfstein, and G. Cantwell, J. Appl. Phys. 93, 3214 (2003).
11. J. F. Rommeluere, L. Svob, F. Jomard, J. M. Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, Appl. Phys. Lett. 83, 287 (2003).
12. A. B. M. A. Ashrafi, I. Suemune, H. Kumano, and S. Tanaka, Jpn. J. Appl. Phys., Part 2 41, L1281 (2002).
13. G. Popovici, W. Kim, A. Botchkarev, H. Tang, and H. Morkoç, Appl. Phys. Lett. 71, 3385 (1997).
14. T. Makino, C. H. Chia, N. T. Tuan, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, Appl. Phys. Lett. 76, 3549 (2000).
15. A. K. Viswanath, J. I. Lee, S. Yu, D. Kim, Y. Choi, and C. Hong, J. Appl. Phys. 84, 3848 (1998).
16. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Cantwell, T. C. Collins, W. Harsch, and G. Cantwell, Phys. Rev. B 57, 12151 (1998).
17. M. E. Lin, S. Strite, A. Agawal, A. Salvador, G. L. Zhou, N. Teraguchi, A. Rockett, and H. Morkoç, Appl. Phys. Lett. 62, 702 (1993).
18. A. B. M. A. Ashrafi, N. T. Binh, B.-P. Zhang, and Y. Segawa, Semicond. Sci. Technol. (to be published).
19. E. S. Hellman, J. Nitride Semicond. Res. 3, 11 (1998).