Growth of 3-inch diameter 6H-SiC single crystals by sublimation physical vapor transport

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 35-38

  Wang, S ^a   Sanchez, E K ^a   Kopec, A ^a   Poplawski, S ^a   Ware, R ^a   Holmes, S ^a   Balkas, C M ^b   Timmerman, A G ^a  

^a Sterling Semiconductor Inc   (United States)

^b Sterling Semiconductor Inc   (United States)

Author keywords

Crystal growth; Micropipes; PVT; SiC; Sublimation; Wafer diameter

Indexed keywords

CRYSTAL GROWTH; DEFECT DENSITY; DISLOCATIONS (CRYSTALS); SILICON WAFERS; SINGLE CRYSTALS; SUBLIMATION; SILICON CARBIDE;

DISLOCATION DENSITY; GROWTH PARAMETERS; MICROPIPES; PHYSICAL VAPOR TRANSPORT (PVT); WAFER DIAMETER; CRYSTALLINE DEFECTS; DISLOCATION DENSITIES; HIGH QUALITY; PHYSICAL VAPOR TRANSPORT; SIC SINGLE CRYSTALS;

SILICON CARBIDE; SINGLE CRYSTALS;

EID: 34247196640     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.35     Document Type: Article

References (4)

1. P. G. Neudeck, D. J. Larkin, et. al., IEEE Electron Device Letters, 14 (1993) p. 136.
2. Y. M. Tairov, V. F. Tsvetkov, J. Crystal Growth, 43 (1978), p.209.
3. D. L. Barrett, R. G. Seidensticker, W.Gaida, R. H. Hopkins, W. J. Choyke, J. Crystal Growth, 109, (1991), p.17.
4. D. Hobgood, et. al., Materials Science Forum Vols. 338-342 (2000) pp. 3-8.