Crystal growth of micropipe free 4H-SiC on 4H-SiC{0 3 over(3, -) 8} seed and high-purity semi-insulating 6H-SiC

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 188-191

  Shiomi, Hiromu ^a   Kinoshita, Hiroyuki ^a   Furusho, Tomoaki ^a   Hayashi, Toshihiko ^a   Tajima, Michio ^b   Higashi, Eiko ^b  

^a SiXON Ltd   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

A1. Micropipe; A1. Photoluminescence; A1. Sublimation; A1. X ray topography; B1. 4H SiC 0 3 over(3, ) 8 ; B1. 6H SiC

Indexed keywords

DOPING (ADDITIVES); LATTICE CONSTANTS; PHOTOLUMINESCENCE; SILICON CARBIDE; SILICON WAFERS; SUBLIMATION; X RAY ANALYSIS;

6H-SIC; MICROPIPE; X-RAY TOPOGRAPHY;

CRYSTAL GROWTH;

EID: 33745942287     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.004     Document Type: Article

References (5)

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5. Tajima M., Higashi E., Hayashi T., Kinoshita H., and Shiomi H. Appl. Phys. Lett. 86 (2005) 061914