Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations

Journal of Applied Physics

Volumn 105, Issue 11, 2009, Pages

  Fujisawa, Takeshi ^a   Arai, Masakazu ^a   Yamanaka, Takayuki ^a   Kondo, Yasuhiro ^a   Kano, Fumiyoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE CALCULATION; BARRIER MATERIAL; CHARACTERISTIC TEMPERATURE; DIFFERENTIAL GAIN; GAINNAS; HIGH TEMPERATURE; HIGH-SPEED; HIGH-SPEED OPERATION; HIGH-T; HIGHLY STRAINED; LASER DIODES; MATERIAL GAIN; MATERIAL PROPERTY; MICROSCOPIC THEORY; QUANTUM WELL; QUANTUM WELL LASER DIODES; QUANTUM WELL STRUCTURES; TERNARY SUBSTRATES;

GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS; LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 67649541512     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3126522     Document Type: Article

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